CAB003M09DM3

Overview

The Wolfspeed CAB003M09DM3 is a 900 V Silicon Carbide half-bridge module utilizing third-generation technology. It features an ultra-low loss aluminum silicon carbide baseplate and silicon nitride insulation for high-frequency operation. The device supports a maximum junction temperature of 175 °C and operates with a continuous drain current of 518 A at 25 °C case temperature. Key electrical parameters include a typical on-state resistance of 2.5 mΩ, a power dissipation rating of 1163 W, and a stray inductance of 11.5 nH.

Feature Summary

• Implements Wolfspeed’s Third Generation SiC MOSFET Technology
• Ultra-Low Loss and Lightweight AlSiC Baseplate
• Silicon Nitride Insulator
• High Junction Temperature (175 °C) Operation

Applications

• E-Mobility Inverters
• EV Chargers
• High-Efficiency Converters / Inverters
• Renewable Energy

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing procurement. Confirm that the ordering suffix matches the required technical specifications, as variations may exist within the product family. Ensure compliance with RoHS and REACh directives relevant to the target market. Cross-reference the datasheet version number to validate all electrical characteristics and thermal limits prior to integration into the design.

Selection Notes

Select this component for designs requiring high power density and low switching losses in medium-power applications. Evaluate the thermal management strategy to maintain the case temperature within the specified derating curves for continuous drain current. Consider the external gate resistance requirements to optimize switching speed and minimize electromagnetic interference. Verify that the system voltage does not exceed the 900 V breakdown rating under all transient conditions.

Part Context

This module belongs to the DM3 WolfPACK™ series, designed for compact industrial and automotive applications. It integrates two switch positions in a standardized footprint to facilitate scalable power electronics designs. The package utilizes press-fit mounting for reliable connection and efficient heat transfer through the aluminum silicon carbide baseplate.

Replacement Considerations

Direct replacements must match the 900 V rating, half-bridge configuration, and DM3 mechanical footprint. Verify that substitute devices offer comparable on-state resistance and thermal performance to ensure system efficiency is maintained without redesigning the cooling infrastructure.

FAQ

What is the recommended operational gate voltage range?

The recommended operational gate voltage range is -4 V to +15 V.

How is the continuous drain current affected by case temperature?

The continuous drain current must be derated as the case temperature increases, dropping from 518 A at 25 °C to lower values at higher temperatures to keep the junction temperature below 175 °C.

What is the typical junction-to-case thermal resistance?

The typical junction-to-case thermal resistance is 0.129 °C/W.