CAB004M12GM4T

CAB004M12GM4T

$207.72
  • Description:SIC, MODULE, 4M, 1200V, 48 MM, G
  • Series:WolfPACK™

SKU:6fbf764dfc92 Category: Brand:

  
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Product Detailed Parameters

  • Description:SIC, MODULE, 4M, 1200V, 48 MM, G
  • Series:WolfPACK™
  • Mfr:Wolfspeed, Inc.
  • Package:Box
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:200A (Tj)
  • Rds On (Max) @ Id, Vgs:5.2mOhm @ 240A, 15V
  • Vgs(th) (Max) @ Id:4V @ 75mA
  • Gate Charge (Qg) (Max) @ Vgs:1144nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:26.4pF @ 800V
  • Power - Max:584W (Tj)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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CAB004M12GM4T

Overview

The Wolfspeed CAB004M12GM4T is a baseplate-less, half-bridge Silicon Carbide (SiC) power module featuring Gen4 technology with a soft body diode. It provides a drain-source voltage of 1200 V and an on-state resistance of 4 mΩ. The module supports a continuous drain current of 200 A at a heatsink temperature of 50 °C and a virtual junction temperature up to 175 °C. It utilizes press-fit pins for assembly and includes pre-applied phase change thermal interface material. Key electrical parameters include a maximum gate-source voltage of -10 V to +23 V transiently, a typical switching energy of 2.2 mJ turn-on and 1.0 mJ turn-off at 600 V/200 A, and a package stray inductance of 5.8 nH.

Feature Summary

  • Fully SiC MOSFET-based architecture for ultra-low conduction and switching losses
  • Gen4 technology implementation featuring a soft body diode for reduced reverse recovery effects
  • Baseplate-less WolfPACK design with press-fit pins for simplified mechanical assembly
  • UL 1557 certified electrically isolated semiconductor device

Applications

  • High-efficiency DC/DC converters and inverters
  • Renewable energy systems including solar inverters
  • Smart-grid and grid-tied distributed generation equipment
  • Electric vehicle (EV) charging infrastructure

Procurement Notes

Verify the specific ordering suffix 'T' to confirm the inclusion of pre-applied phase change thermal interface material, as this distinguishes it from the non-T variant. Ensure compatibility with standard press-fit mounting tools and verify that the system design accounts for the specified 5.8 nH stray inductance. Confirm RoHS compliance status through official documentation prior to integration.

Selection Notes

Select this module for applications requiring high power density and low thermal impedance due to its baseplate-less construction. The 4 mΩ on-resistance and soft body diode characteristics make it suitable for high-frequency operation. Designers must account for the 200 A continuous current limit imposed by the package at a 50 °C heatsink temperature and ensure gate drive voltages remain within the recommended operational range of -4 V to +15 V.

Part Context

This component belongs to the Wolfspeed WolfPACK family of baseplate-less silicon carbide power modules. These modules are designed to meet industry-standard footprint requirements while offering enhanced thermal performance and scalability for medium-power applications. The family includes various configurations such as half-bridge, six-pack, and full-bridge topologies.

Replacement Considerations

The CAB004M12GM4 serves as the direct functional equivalent without pre-applied thermal interface material. Substitution requires manual application of compatible thermal interface materials and verification of mounting torque specifications.

CAB004M12GM4TCAB004M12GM4T
$207.72
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