CAB006A12GM3

Overview

The Wolfspeed CAB006A12GM3 is a half-bridge Silicon Carbide (SiC) MOSFET module featuring a 1200 V drain-source voltage and a typical on-state resistance of 6 mΩ. It supports a continuous DC drain current of 200 A at a heatsink temperature of 75 °C, with a pulsed current capability of 400 A. The device operates within a virtual junction temperature range of -40 °C to 150 °C, extending to 175 °C intermittently. Key electrical parameters include an operational gate-source voltage of -4 V to +15 V and a maximum transient gate-source voltage of +23 V. The module utilizes an aluminum nitride substrate and press-fit pins for assembly.

Feature Summary

• Fully SiC MOSFET-based architecture providing ultra-low conduction and switching losses
• Zero turn-off tail current inherent to the MOSFET technology ensuring safe operation
• Aluminum Nitride substrate combined with press-fit pins for simplified mechanical assembly
• UL 1557 certified electrically isolated semiconductor device

Applications

• DC-DC Converters
• EV Chargers
• High-Efficiency Converters / Inverters
• Renewable Energy Systems
• Smart-Grid / Grid-Tied Distributed Generation

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number CAB006A12GM3 indicates the module without pre-applied thermal interface material. The suffix T, as in CAB006A12GM3T, denotes the version that includes pre-applied phase change thermal interface material. Confirm the required configuration matches the system design before procurement.

Selection Notes

Select this component for designs requiring high power density and efficiency in compact form factors. The low stray inductance layout supports fast switching speeds suitable for high-frequency applications. Ensure the gate drive circuitry accommodates the recommended 15 V turn-on voltage and the specified negative turn-off voltage for optimal performance and reliability.

Part Context

This module belongs to the WolfPACK series from Wolfspeed, designed for medium-power applications across the power electronics continuum. It offers a standardized industry footprint that facilitates easy integration into existing systems while improving efficiency over traditional silicon IGBT solutions.

Replacement Considerations

Direct replacement requires matching the 1200 V rating, half-bridge topology, and physical dimensions. Verify that any substitute component meets the same thermal resistance and package mounting requirements to ensure compatibility with existing heatsinking and PCB layouts.

FAQ

What is the difference between CAB006A12GM3 and CAB006A12GM3T?

The primary difference is the thermal interface material. The CAB006A12GM3 does not include pre-applied thermal interface material, whereas the CAB006A12GM3T comes with pre-applied phase change thermal interface material.

Does this module exhibit a tail current during turn-off?

No, the module features zero turn-off tail current due to its fully SiC MOSFET-based construction, which contributes to lower switching losses.

What is the maximum transient gate-source voltage allowed?

The maximum transient gate-source voltage (VGS(max)) is +23 V and -10 V, as specified in the datasheet.