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Product Detailed Parameters
- Description：SIC 2N-CH 1200V
- Series：WolfPACK™
- Mfr：Wolfspeed, Inc.
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：6.9mOhm @ 200A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 69mA
- Gate Charge (Qg) (Max) @ Vgs：708nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：20400pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The Wolfspeed CAB006M12GM3 is a half-bridge Silicon Carbide (SiC) MOSFET module rated for 1200 V and 200 A continuous drain current. It features a typical on-state resistance of 6 mΩ at 25°C, enabling ultra-low conduction and switching losses. The device operates within a junction temperature range of -40°C to 175°C and utilizes press-fit pins for assembly. Key electrical parameters include a maximum gate-source voltage of +23 V transient and -4 V to +15 V operational limits. The module includes an integrated NTC thermistor with a nominal resistance of 5.0 kΩ at 25°C.
Feature Summary
- Fully SiC MOSFET-based architecture providing zero turn-off tail current
- Press-fit pin design facilitating easy mechanical assembly
- Integrated NTC thermistor for precise thermal monitoring
- Optional pre-applied phase change thermal interface material
Applications
- DC-DC Converters
- High-Efficiency Converters and Inverters
- Renewable Energy Systems
- Smart-Grid and Grid-Tied Distributed Generation
- Electric Vehicle Chargers
Procurement Notes
Verify the specific ordering suffix when purchasing. The suffix 'T' indicates the inclusion of pre-applied phase change thermal interface material, whereas the standard suffix denotes its absence. Confirm UL 1557 component recognition requirements if isolation certification is mandatory for the target system design.
Selection Notes
Select this module for applications requiring high power density and low thermal impedance. Ensure heatsink temperatures remain within derating curves to maintain the 200 A continuous current rating. Verify that external gate resistors are sized correctly to manage dv/dt and di/dt rates while minimizing switching energy losses.
Part Context
This component belongs to the WolfPACK™ series of silicon carbide power modules. It is designed to replace traditional silicon IGBTs in medium-power applications, offering superior efficiency and reduced cooling requirements due to lower switching and conduction losses inherent to wide-bandgap technology.
Replacement Considerations
Direct replacement requires verifying pin compatibility and thermal interface specifications. Consider the GM3T variant if pre-applied TIM is required. Evaluate gate driver capabilities to handle the fast switching speeds characteristic of SiC devices compared to legacy silicon components.
FAQ
What is the difference between CAB006M12GM3 and CAB006M12GM3T?
The 'T' suffix indicates that the module comes with pre-applied phase change thermal interface material. The standard version does not include this material.
Does this module have a baseplate?
No, the CAB006M12GM3 is a baseplate-less module designed for direct mounting to a heatsink using press-fit pins.
What is the recommended operating gate voltage?
The recommended turn-on gate voltage is 15 V with ±5% regulation tolerance. The operational range is -4 V to +15 V.
