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Product Detailed Parameters
- Description：SIC 2N-CH 1200V
- Series：WolfPACK™
- Mfr：Wolfspeed, Inc.
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：10.4mOhm @ 150A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 46mA
- Gate Charge (Qg) (Max) @ Vgs：472nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：13600pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The Wolfspeed CAB008M12GM3 is a Silicon Carbide (SiC) half-bridge module rated at 1200 V and 8 mΩ. It features press-fit pins for assembly and operates within a junction temperature range of -40 °C to 175 °C. The DC continuous drain current reaches 160 A at THS = 50 °C with TVJ ≤ 150 °C, or 168 A with TVJ ≤ 175 °C. Pulsed drain current is 336 A. Power dissipation is 411 W at THS = 50 °C. Key electrical parameters include a gate-source voltage of -4/+15 V, threshold voltage of 1.8 V typical, and internal gate resistance of 1.7 Ω.
Feature Summary
- Fully SiC MOSFET-based design for ultra-low switching and conduction losses
- Zero turn-off tail current characteristic inherent to the MOSFET technology
- Press-fit pin configuration facilitates easy mechanical assembly
- Conforms to UL STD 1557 safety standards
Applications
- DC-DC Converters
- High-Efficiency Converters / Inverters
- Renewable Energy Systems
- Smart-Grid / Grid-Tied Distributed Generation
- EV Chargers
Procurement Notes
Verify the specific ordering suffix when purchasing. The 'GM3' variant does not include pre-applied thermal interface material. The 'GM3T' variant includes pre-applied phase change thermal interface material. Ensure the selected part number matches the thermal management requirements of the target system design.
Selection Notes
Select this component based on its 1200 V rating and low on-state resistance for high-efficiency power conversion. Consider the 160 A continuous current capability relative to heatsink temperatures. Verify compatibility with recommended gate drive voltages (-4 V/15 V). Evaluate stray inductance and thermal resistance specifications against system constraints.
Part Context
This module belongs to the WolfPACK product family from Wolfspeed. It utilizes a compact industry-standard package designed to increase power density. The platform supports scalable system designs while minimizing parasitic elements. It represents a silicon carbide solution intended to replace traditional silicon components in demanding power electronics applications.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Designers should evaluate other Wolfspeed WolfPACK modules or comparable 1200 V SiC half-bridge modules based on matching voltage ratings, current capabilities, and package dimensions.
FAQ
What is the difference between CAB008M12GM3 and CAB008M12GM3T?
The GM3 version does not include pre-applied thermal interface material, whereas the GM3T version comes with pre-applied phase change thermal interface material.
What is the maximum operating junction temperature?
The module supports an operational junction temperature up to 150 °C continuously, with intermittent operation allowed up to 175 °C with reduced life.
Does this module exhibit turn-off tail current?
No, the fully SiC MOSFET-based design provides zero turn-off tail current.
