CAB011M12FM3

Overview

The Wolfspeed CAB011M12FM3 is a WolfPACK silicon carbide half-bridge power module rated at 1200 V with an on-state resistance of 11 mΩ. It utilizes press-fit pins for assembly and operates within a junction temperature range of -40 °C to 150 °C, supporting intermittent operation up to 175 °C. The module provides a DC continuous drain current of 117 A at 150 °C and 120 A at 175 °C, with a pulsed current capability of 240 A. Key electrical parameters include a maximum gate-source voltage of +23 V transient and -10 V minimum, a typical threshold voltage of 2.5 V, and a junction-to-heatsink thermal resistance of 0.428 °C/W.

Feature Summary

• Fully SiC MOSFET-based architecture providing ultra-low switching and conduction losses
• Zero turn-off tail current characteristic inherent to the MOSFET technology
• Press-fit pin connection system designed for simplified prototyping and manufacturing assembly

Applications

• DC-DC Converters
• High-Efficiency Converters and Inverters
• Renewable Energy Systems
• Smart-Grid and Grid-Tied Distributed Generation
• Electric Vehicle Chargers

Procurement Notes

Verify the specific ordering suffix when purchasing components. The suffix 'T' indicates the inclusion of pre-applied phase change thermal interface material, whereas the standard version lacks this feature. Confirm that the selected variant aligns with the thermal management strategy required for the target application design.

Selection Notes

Evaluate the module's thermal performance against the expected heatsink temperatures using the provided derating curves. Ensure the external gate drive circuitry supports the recommended operating voltage of -4 V to +15 V while respecting the absolute maximum transient limits. Account for the stray inductance of the module layout during high-frequency switching operations.

Part Context

This component belongs to the WolfPACK family of 1200 V silicon carbide modules from Wolfspeed. These modules are engineered to bridge the gap between discrete components and high-current solutions, offering industry-standard form factors. The series emphasizes compact system design through reduced thermal requirements and increased efficiency compared to traditional silicon devices.

Replacement Considerations

Direct replacements must match the 1200 V rating, half-bridge configuration, and compatible physical footprint. Verify that alternative modules support similar press-fit mounting or provide necessary mechanical adapters. Cross-reference thermal resistance and current derating characteristics to ensure equivalent system performance.