CAB011M12FM3T

Overview

The Wolfspeed CAB011M12FM3T is a WolfPACK half-bridge module utilizing Silicon Carbide MOSFET technology. It features a 1200 V drain-source voltage and an on-state resistance of 11 mΩ. The device supports a continuous drain current of 117 A at a heatsink temperature of 50 °C, with a pulsed current capability of 240 A. Operating within a junction temperature range of -40 °C to 150 °C, it includes press-fit pins for assembly and comes with pre-applied phase change thermal interface material.

Feature Summary

• Fully SiC MOSFET-based architecture providing ultra-low switching and conduction losses
• Zero turn-off tail current characteristic inherent to the MOSFET structure
• Press-fit pin configuration designed for simplified mechanical assembly
• Compliance with UL STD 1557 standards for electrically isolated semiconductor devices

Applications

• DC-DC Converters
• High-Efficiency Converters and Inverters
• Renewable Energy Systems
• Smart-Grid and Grid-Tied Distributed Generation
• Electric Vehicle Chargers

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'T' suffix indicates the inclusion of pre-applied phase change thermal interface material, whereas the non-suffixed version lacks this feature. Ensure the selected variant matches the thermal management strategy defined in the system design specifications before finalizing procurement orders.

Selection Notes

Evaluate the module's thermal performance against the application's power dissipation requirements using the provided junction-to-heatsink thermal resistance data. Confirm that the gate drive circuitry accommodates the specified operating voltage limits and internal gate resistance. Verify that the mounting torque aligns with the recommended specifications to ensure reliable electrical contact through the press-fit pins.

Part Context

This component belongs to the WolfPACK family of discrete silicon carbide power modules manufactured by Wolfspeed. The series is engineered to support high-efficiency power conversion systems by integrating advanced SiC MOSFET technology into compact packages. The product line emphasizes reduced system size and weight while maintaining robust electrical isolation and thermal performance.

Replacement Considerations

The standard CAB011M12FM3 serves as the direct functional equivalent without pre-applied thermal interface material. Designers must verify if the absence of the TIM affects the thermal solution or requires separate application procedures during assembly.