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Product Detailed Parameters
- Description：MOSFET 2N-CH 1700V 653A MODULE
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C：653A (Tc)
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 500A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 203mA
- Gate Charge (Qg) (Max) @ Vgs：1992nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：64900pF @ 1200V
- Power - Max：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
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Overview
The Wolfspeed CAB500M17HM3 is a Silicon Carbide half-bridge power module rated for 1700 V and 500 A. It utilizes third-generation SiC MOSFET technology within a low-inductance, low-profile 62 mm footprint. The device supports continuous junction operation up to 175 °C and features an AlSiC baseplate with a high-reliability silicon nitride insulator. Key electrical parameters include a typical RDS(on) of 2.60 mΩ at 175 °C, a DC drain current of 494 A at TC = 90 °C, and a stray inductance of 4.9 nH between terminals 1 and 3.
Feature Summary
- Implements switching optimized third-generation SiC MOSFET technology for enhanced efficiency.
- Features a lightweight AlSiC baseplate and high reliability silicon nitride insulator.
- Designed with a low inductance, low profile 62 mm footprint for system compatibility.
Applications
- Railway & Traction
- Solar
- EV Chargers
- Industrial Automation & Testing
Procurement Notes
Verify the specific ordering suffix when purchasing. The standard CAB500M17HM3 does not include pre-applied phase change thermal interface material. The variant ending in 'T' includes this material. Confirm that the component bears the UL marking for recognition under UL 1557 if required by your design specifications.
Selection Notes
Select the CAB500M17HM3 for applications requiring a 62 mm compatible baseplate form factor. Ensure the gate drive circuit accommodates the recommended VGS(op) range of -4/+15 V. Verify thermal management capabilities to maintain TVJ ≤ 175 °C under expected load conditions, considering the Rth JC of 0.070 °C/W.
Part Context
This component belongs to the HM3 (High Performance Module Gen 3) platform designed for silicon carbide devices. It is part of a family including models like CAS480M12HM3 and CAB760M12HM3. The platform aims to maximize power density while minimizing loop inductance and simplifying power bussing for robust system designs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult official application notes or technical support for potential cross-reference options or updated module generations.
