CAB6R0A23GM4

Overview

The Wolfspeed CAB6R0A23GM4 is a press-fit, half-bridge silicon carbide (SiC) power module featuring Gen4 technology. It provides a drain-source voltage of 2300 V and a typical on-state resistance of 6.0 mΩ at 25°C. The device utilizes an aluminum nitride substrate for thermal management and includes an integrated NTC temperature sensor. Key electrical parameters include a continuous DC drain current of 150 A and a pulsed drain current of 600 A. The module supports a maximum junction temperature of 150°C and complies with UL STD 1557.

Feature Summary

• Fully SiC MOSFET-based architecture designed for ultra-low switching and conduction losses.
• Features Gen4 technology incorporating a soft body diode to reduce reverse recovery energy.
• Utilizes press-fit pins for simplified assembly and reliable mechanical connection.
• Built on an aluminum nitride substrate to enable compact, lightweight system designs.

Applications

• High-efficiency converters and inverters
• Energy storage systems
• DC fast chargers
• Solar inverters
• Smart-grid and grid-tied distributed generation

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix 'T' indicates the inclusion of pre-applied phase change thermal interface material. Confirm that the selected variant matches the thermal design requirements of the target application before procurement.

Selection Notes

Select this module for applications requiring high blocking voltage and low loss in a standard industry footprint. Ensure the heatsink temperature remains within limits to maintain the rated 150 A continuous current. Verify gate drive compatibility with the specified operating voltage range.

Part Context

This component belongs to the WolfPACK™ series of press-fit modules. It is part of a family offering various ratings, including the CAB5R0A23GM4 and CAB7R5A23GM4, which share similar packaging but differ in on-resistance values.

Replacement Considerations

Compatible substitutes within the same series include CAB5R0A23GM4 and CAB7R5A23GM4. These alternatives offer different on-resistance specifications while maintaining the same 2300 V rating and physical form factor.

FAQ

What is the difference between CAB6R0A23GM4 and CAB6R0A23GM4T?

The only difference is the thermal interface material. The CAB6R0A23GM4T comes with pre-applied phase change thermal interface material, whereas the CAB6R0A23GM4 does not.

Does this module comply with safety standards?

Yes, the module conforms to UL STD 1557 as an electrically isolated semiconductor device component.

What is the recommended operational gate-source voltage?

The datasheet specifies a recommended turn-on gate voltage of 15 V with a ±5% regulation tolerance.