CAB6R0A23GM4T

Overview

The Wolfspeed CAB6R0A23GM4T is a 2300 V Silicon Carbide half-bridge power module utilizing Gen4 technology. It features an on-state resistance of 6.0 mΩ and supports continuous drain currents up to 150 A at a heatsink temperature of 75 °C. The module employs press-fit pins for assembly and includes an optional pre-applied phase change thermal interface material. Built on an aluminum nitride substrate, it operates within a virtual junction temperature range of -40 °C to 150 °C.

Feature Summary

• Fully SiC MOSFET-based architecture with soft body diode characteristics
• Press-fit pin configuration for simplified mechanical assembly
• Aluminum nitride substrate construction for enhanced thermal management
• UL STD 1557 certified electrically isolated semiconductor device

Applications

• High-efficiency converters and inverters
• Energy storage systems
• Renewable energy applications
• Smart-grid and grid-tied distributed generation
• Solar inverters
• DC fast chargers

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'T' suffix indicates the inclusion of pre-applied phase change thermal interface material, whereas the base part number lacks this feature. Confirm that the selected variant matches the thermal design requirements of the target application before finalizing procurement orders.

Selection Notes

Select this module for high-voltage applications requiring low switching losses and compact system footprints. Ensure the gate driver provides appropriate voltage levels, as the recommended turn-on gate voltage is 15 V. Evaluate the stray inductance limits and mounting torque specifications (2.0 to 2.3 N-m) to maintain optimal electrical performance and mechanical integrity during operation.

Part Context

This component belongs to the WolfPACK series of silicon carbide power modules designed for harsh high-voltage environments. It utilizes industry-standard 48 mm packaging dimensions to facilitate integration into existing system architectures while offering improved efficiency through reduced conduction and switching losses compared to traditional silicon devices.

Replacement Considerations

The non-suffixed version CAB6R0A23GM4 serves as a direct functional substitute if pre-applied thermal interface material is not required. Verify that any alternative replacement maintains compatible package dimensions, pin configurations, and electrical ratings to ensure seamless integration without redesigning the host circuit board or mechanical assembly.

FAQ

What is the difference between CAB6R0A23GM4 and CAB6R0A23GM4T?

The primary difference is the inclusion of pre-applied phase change thermal interface material in the CAB6R0A23GM4T variant. The standard CAB6R0A23GM4 does not include this material.

What is the maximum operational gate-source voltage?

The maximum transient gate-source voltage is +23 V. The recommended static operational gate-source voltage is -4 V for turn-off and +15 V for turn-on.

Is this module UL certified?

Yes, the module conforms to UL STD 1557 as an electrically isolated semiconductor device component. Only modules bearing the ETL marking are covered under the recognition program.