ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 234A
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Box
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：234A (Tc)
- Rds On (Max) @ Id, Vgs：10.4mOhm @ 175A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 43mA
- Gate Charge (Qg) (Max) @ Vgs：422nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：12900pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The CAS175M12BM3 is a silicon carbide half-bridge module rated for 1200 V and 175 A. It features an industry standard 62 mm footprint with screw mount installation. Key electrical parameters include a drain-source voltage of 1200 V, continuous drain current of 176 A at 90 °C case temperature, and on-state resistance of 10.4 mΩ at 25 °C. The recommended gate-source voltage is -4 V to +15 V. Operating temperatures range from -40 °C to 150 °C, with intermittent capability up to 175 °C.
Feature Summary
- Industry standard 62 mm form factor enabling system retrofit
- Ultra-low loss and high-frequency operation capabilities
- Zero reverse recovery from diodes and zero turn-off tail current from MOSFETs
- Normally-off, fail-safe device operation
Applications
- Induction heating
- Motor drives
- Renewables
- Railway auxiliary and traction
- EV fast charging
Procurement Notes
Verify the specific ordering suffix when purchasing. The CAS175M12BM3 variant does not include pre-applied phase change thermal interface material. The CAS175M12BM3T variant includes this material. Confirm RoHS compliance status through official documentation channels before finalizing procurement orders.
Selection Notes
Select based on required switching frequency and thermal management constraints. Ensure gate drive voltages remain within the -4 V to +15 V static operating range. Verify that the external circuit stray inductance aligns with the module's low parasitic design to maximize performance benefits.
Part Context
This component belongs to the BM3 series of Wolfspeed SiC modules. It utilizes a copper baseplate and aluminum nitride insulator. The package supports dual-channel differential isolated gate drivers and is compatible with specific evaluation hardware kits for dynamic performance testing.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided datasheet. Designers should verify pinout compatibility and thermal resistance values if considering alternative manufacturers' modules with similar ratings.
FAQ
What is the difference between CAS175M12BM3 and CAS175M12BM3T?
The CAS175M12BM3T includes pre-applied phase change thermal interface material, whereas the CAS175M12BM3 does not.
What is the maximum transient gate-source voltage?
The maximum transient gate-source voltage is -10 V to +23 V.
Does this module exhibit reverse recovery energy?
SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energy during switching transitions.
