SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CAS380M17HM3 is a 1700 V, 380 A Silicon Carbide half-bridge power module from Wolfspeed. It utilizes third-generation SiC MOSFET technology with a low inductance 62 mm footprint and an AlSiC baseplate. Key electrical parameters include a drain-source voltage of 1700 V, typical on-state resistance of 3.74 mΩ at 175 °C, and a maximum junction temperature of 175 °C. The module integrates NTC thermal sensors and offers high reliability through silicon nitride insulation.
Verify the specific ordering suffix when purchasing. The CAS380M17HM3 designation indicates the module without pre-applied phase change thermal interface material. The CAS380M17HM3T variant includes this material. Confirm that the component bears the UL marking for recognition under UL 1557 if required for system certification.
Select based on the 1700 V rating and 380 A current capacity suitable for high-power density systems. Ensure the design accommodates the 62 mm compatible baseplate form factor for potential retrofitting. Consider the 175 °C maximum junction temperature capability for thermal optimization in demanding environments.
This component belongs to the HM3 (High Performance Module) platform designed by Wolfspeed. It is part of a family including variants like CAB760M12HM3 and CAS480M17HM3, sharing the same 62 mm footprint to facilitate standardized mechanical integration across different power levels within the same product ecosystem.
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult Wolfspeed technical support or use the SpeedFit 2.0 Design Simulator to identify equivalent components meeting specific voltage, current, and thermal requirements.
The CAS380M17HM3 does not include pre-applied phase change thermal interface material, whereas the CAS380M17HM3T comes with this material applied.
No, the module implements SiC Schottky Diodes which provide zero reverse recovery characteristics, although they contribute capacitive energy during switching.
The stray inductance between terminals 1 and 3 is specified as 4.9 nH.