CBB011M12GM4

CBB011M12GM4

$166.81
  • Description:SIC, MODULE, 11M, 1200V, 48 MM,
  • Series:WolfPACK™

SKU:63dbe1723a9d Category: Brand:

  
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Product Detailed Parameters

  • Description:SIC, MODULE, 11M, 1200V, 48 MM,
  • Series:WolfPACK™
  • Mfr:Wolfspeed, Inc.
  • Package:Box
  • Technology:Silicon Carbide (SiC)
  • Configuration:4 N-Channel (Full Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:100A (Tj)
  • Rds On (Max) @ Id, Vgs:14.9mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id:4V @ 28mA
  • Gate Charge (Qg) (Max) @ Vgs:405nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:10.1pF @ 800V
  • Power - Max:292W (Tj)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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CBB011M12GM4

Overview

The Wolfspeed CBB011M12GM4 is a 1200 V, 11 mΩ Silicon Carbide full-bridge power module utilizing Gen4 technology. It features four MOSFET positions with an operational gate-source voltage range of -4 V to +15 V and a maximum transient rating of +23 V. The device supports a DC continuous drain current of 100 A at a heatsink temperature of 50 °C and a virtual junction temperature up to 175 °C. Key electrical parameters include a typical on-state resistance of 11.0 mΩ and a junction-to-heatsink thermal resistance of 0.429 °C/W. The module incorporates press-fit pins for assembly and includes an integrated NTC temperature sensor.

Feature Summary

  • Generates ultra-low switching and conduction losses through Silicon Carbide material properties and Gen4 technology.
  • Features a soft body diode design to minimize reverse recovery energy and improve system efficiency.
  • Utilizes press-fit pin connections to facilitate easy mechanical assembly and reduce mounting complexity.
  • Includes optional pre-applied phase change thermal interface material to streamline thermal management integration.

Applications

  • High-efficiency converters and inverters
  • Renewable energy systems
  • Smart-grid and grid-tied distributed generation
  • Electric vehicle (EV) chargers

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number CBB011M12GM4 indicates the absence of pre-applied thermal interface material. The variant CBB011M12GM4T includes pre-applied phase change thermal interface material. Confirm the required configuration matches the application's thermal assembly requirements before procurement.

Selection Notes

Select this module for applications requiring high-frequency operation and compact system designs due to low thermal resistance. Ensure the gate driver provides a recommended turn-on voltage of 15 V with ±5% regulation tolerance. Verify that the stray inductance limits and pulsed current capabilities align with the specific circuit topology and switching frequency requirements.

Part Context

This component belongs to the Wolfspeed WolfPACK family of silicon carbide power modules. It is designed as a full-bridge configuration containing four independent switch positions. The module integrates advanced thermal management features and is UL 1557 certified for electrically isolated semiconductor devices, ensuring compliance with specific safety standards for power electronics applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Wolfspeed technical support or official cross-reference lists for compatible alternatives. Any replacement must match the 1200 V rating, package dimensions, and pinout configuration to ensure mechanical and electrical compatibility.

FAQ

What is the recommended operating gate-source voltage?

The recommended turn-on gate voltage is 15 V with a ±5% regulation tolerance. The static operational range is -4 V to +15 V/18 V.

How does the module handle thermal monitoring?

The module includes an integrated NTC temperature sensor with a rated resistance of 5.0 kΩ at 25 °C to monitor junction temperature.

What is the maximum transient gate-source voltage?

The maximum transient gate-source voltage (VGS(max)) is +23 V, as specified in Figure 33 of the datasheet.

CBB011M12GM4CBB011M12GM4
$166.81
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