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Product Detailed Parameters
- Description：GANFET 200V 18A .025 OHM 4DAPT
- Series：-
- Mfr：EPC Space, LLC
- Package：Tray
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Procurement Notes
Verify the specific manufacturer and exact part number through official component databases or authorized distributor catalogs. Confirm that EPC Space, LLC is the correct entity for this device identifier. Ensure the datasheet matches the requested specifications before procurement to avoid compatibility issues with system requirements.
Selection Notes
Select this component after confirming its electrical characteristics align with the target application's voltage and current demands. Review the package type and thermal performance data to ensure it fits the mechanical design constraints. Validate the operating temperature range against the intended environment to guarantee reliable long-term operation.
Part Context
EPC Space, LLC specializes in wide-bandgap semiconductor technologies, particularly silicon carbide (SiC) power devices. The CDA20N18X3C likely belongs to their portfolio of high-efficiency power modules or discrete components designed for advanced energy conversion systems. These products typically target applications requiring high switching frequencies and robust thermal management capabilities.
