CDB7619-000

RF Diode Overview

The CDB7619-000 is a P-type silicon Schottky barrier diode universal chip designed for microwave integrated circuit applications up to the K band. It features a low barrier design with a typical tangential signal sensitivity of -50 dBm at a 30 μA bias and 24.15 GHz test frequency. Key electrical parameters include a maximum reverse voltage of 2 V, a forward current rating of 100 mA, and a junction capacitance of 0.10 pF at 0 V. The device utilizes planar passivated beam-lead construction with a 4 mil bond pad to ensure mechanical reliability during assembly.

RF Diode Feature Summary

• P-type silicon construction optimized for superior 1/f noise characteristics in detector applications
• Planar passivated beam-lead and chip design suitable for MIC, stripline, or custom substrates
• Large offset bond pad ensures no mechanical damage to the junction during wire bonding

RF Diode Applications

• Microwave integrated circuit (MIC) detectors
• Doppler mixers requiring low noise performance
• High-sensitivity detection systems

RF Diode Procurement Notes

Verify that the specific order matches the required P-type configuration and beam-lead package style. Confirm that handling procedures adhere to industry-standard ESD precautions to prevent damage. Review the associated application notes for correct waffle pack or gel-pack carrier opening methods before installation.

RF Diode Selection Notes

Select this component when low noise performance in the 1/f region is critical for the intended application. The P-type material offers better noise characteristics compared to N-type alternatives. Ensure the design accounts for the requirement of a small forward bias to reduce video resistance and improve sensitivity while managing parameter variation due to temperature changes.

RF Diode Part Context

This part belongs to Skyworks' family of silicon Schottky barrier diode bondable chips and beam leads. These devices are categorized by frequency bands including S, X, Ku, and Ka bands. The CDB7619-000 specifically targets the K band with a low barrier design, distinguishing it from medium or high barrier variants within the same datasheet.

RF Diode Replacement Considerations

The CDF7621-000 is an N-type alternative listed in the same datasheet. Designers must account for differences in noise characteristics and bias requirements when substituting between P-type and N-type materials.