CDF56G6511N TR13 PBFREE

$4.15

Description：650V, 11A, N-CHANNEL GAN FET IN
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:64d231dea706 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：650V, 11A, N-CHANNEL GAN FET IN
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：190mOhm @ 3.9A, 6V
Vgs(th) (Max) @ Id：2.5V @ 12.2mA
Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 6 V
Vgs (Max)：+7V, -1.4V
Input Capacitance (Ciss) (Max) @ Vds：96 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta), 84W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：8-DFN (5x6)
Package / Case：8-PowerVDFN

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CDF56G6511N TR13 PBFREE

Overview

The CDF56G6511N is a surface-mount N-Channel Gallium Nitride (GaN) power field-effect transistor manufactured by Central Semiconductor Corp. It features a DFN5X6A package and is rated for a drain-source voltage of 650 V and a continuous drain current of 11.5 A at 25°C case temperature. The device exhibits a maximum on-resistance of 190 mΩ and a total gate charge of 2.8 nC. Operating junction temperatures range from -55°C to +150°C, with a power dissipation capacity of 84 W under controlled thermal conditions.

Feature Summary

High voltage capability combined with low on-resistance for optimal efficiency
Low gate charge characteristics designed for high-speed switching applications
Fast switching performance suitable for soft-switching topologies

Applications

Switch-mode power supplies
High power chargers
Electric vehicle inverters

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The PBFREE designation indicates lead-free compliance. Ensure that thermal management requirements align with the specified power dissipation ratings for both case-controlled and ambient-temperature operating conditions before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high-voltage handling with minimal switching losses. The low gate charge reduces driver complexity compared to traditional silicon MOSFETs. Evaluate the thermal resistance requirements carefully, as power dissipation drops significantly when operating without direct case cooling. Confirm compatibility with depletion mode or enhancement mode drive circuits based on system topology.

Part Context

This part belongs to the Central Semiconductor GaN FET family, utilizing wide-bandgap semiconductor technology. The DFN5X6A package provides a compact footprint for modern PCB layouts. The product line targets high-efficiency power conversion systems where size and thermal performance are critical constraints.