CDF56G7032N TR13 PBFREE

Overview

The CDF56G7032N is a surface-mount Gallium Nitride (GaN) N-Channel power field-effect transistor manufactured by Central Semiconductor Corp. It features a DFN5X6A package and is rated for a drain-source voltage of 700 V and a continuous drain current of 18 A at 25°C case temperature. The device exhibits a maximum on-resistance of 140 mΩ and a total gate charge of 3.5 nC. It operates within a junction temperature range of -55°C to +155°C.

Feature Summary

• High voltage capability with low on-resistance and gate charge for optimal efficiency
• Fast switching performance suitable for high-frequency applications
• Designed specifically for high voltage, soft switching environments

Applications

• Switch-mode power supplies
• High power chargers
• Electric vehicle inverters

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The PBFREE designation indicates lead-free compliance. Confirm that the TR13 suffix aligns with the required reel packaging specifications for automated assembly processes before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high-voltage handling combined with low conduction losses. The depletion mode operation requires appropriate gate drive considerations. Ensure thermal management strategies account for the specified power dissipation limits in both case and ambient temperature conditions.

Part Context

This part belongs to the Central Semiconductor CDF56G series of GaN FETs. These devices utilize Gallium Nitride technology to achieve superior performance compared to traditional silicon MOSFETs in high-voltage scenarios. The DFN5X6A package provides a compact footprint with enhanced thermal characteristics for surface mount applications.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.