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Product Detailed Parameters
- Description：MOSFET N-CH 800V 12A TO220FP
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：450mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52.4 nC @ 10 V
- Vgs (Max)：30V
- Input Capacitance (Ciss) (Max) @ Vds：1090 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FP
- Package / Case：TO-220-3 Full Pack
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Overview
The CDM22012-800LRFP SL is an N-channel MOSFET manufactured by Central Semiconductor Corp. It features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 12A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 450mΩ at 6A with a gate-source voltage of 10V. Gate threshold voltage (Vgs(th)) is specified at a maximum of 4V at 250µA, while the total gate charge (Qg) reaches 52.4nA at 10V. The input capacitance (Ciss) is 1090pF at 100V. Maximum gate-source voltage is 30V, and power dissipation is rated at 40W under case conditions.
Feature Summary
- High-voltage capability with 800V drain-source breakdown
- N-channel enhancement mode operation
- Low on-resistance for efficient conduction
- Flange mount package for thermal management
Applications
- High voltage switching circuits
- Power supply designs requiring high blocking voltage
- Industrial motor control applications
Procurement Notes
Verify the exact part number including suffixes against manufacturer documentation to ensure correct pinout and thermal characteristics. Confirm RoHS compliance status if required by specific project standards. Cross-reference datasheet revisions to validate electrical parameters before finalizing design specifications.
Selection Notes
Select this component for applications demanding high voltage isolation and moderate current handling. Evaluate thermal resistance requirements based on the TO-220AB flange mount package. Ensure gate drive voltage aligns with the specified Rds(on) test conditions for optimal performance.
Part Context
This component belongs to the discrete semiconductor category, specifically within the single N-channel MOSFET segment. It is designed for power switching applications where high voltage tolerance is critical. The device utilizes silicon technology for robust operation in industrial environments.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify that any replacement maintains identical voltage ratings, current capacity, and package dimensions to ensure mechanical and electrical compatibility without redesigning the circuit board.
