CDM3-800 TR13 PBFREE

Description：MOSFET N-CH 800V 3A DPAK
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9b3491cd41fd Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 800V 3A DPAK
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.3 nC @ 10 V
Vgs (Max)：30V
Input Capacitance (Ciss) (Max) @ Vds：415 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：80W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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CDM3-800 TR13 PBFREE

Overview

The Central Semiconductor CDM3-800 TR13 PBFREE is a surface-mount N-channel power MOSFET rated for 800V drain-source voltage and 3.0A continuous drain current. It utilizes the DPAK package with a thermal resistance of 110°C/W junction-to-ambient. Key electrical parameters include a maximum gate-source voltage of 30V, a typical on-resistance of 4.8Ω at 10V gate drive, and a total gate charge of 11.3nC. The device supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

High voltage capability up to 800V
Low gate charge for fast switching efficiency
Low on-resistance characteristics

Applications

Power Factor Correction circuits
Alternative energy inverters
Solid State Lighting systems

Procurement Notes

Verify the specific ordering suffix required for your manufacturing process. The PBFREE designation indicates lead-free plating compliance. Confirm availability through authorized distributors as supply levels fluctuate. Ensure the DPAK package dimensions align with your PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component for high-voltage applications requiring moderate current handling in a compact surface-mount form factor. Evaluate the 4.8Ω on-resistance against your conduction loss constraints. Consider the 11.3nC gate charge for driver capability requirements. Verify that the 80W power dissipation rating fits within your thermal management design envelope.

Part Context

This part belongs to the Central Semiconductor CDM3 series of silicon N-channel power MOSFETs. These devices are engineered for high-voltage switching environments. The CDM3-800 specifically targets the 800V breakdown voltage segment, offering a balance between blocking capability and low on-state resistance for efficient power conversion designs.