CDM7-650 TR13 PBFREE

$1.45

Description：MOSFET N-CH 650V 7A DPAK
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ec267e7d4c69 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 650V 7A DPAK
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.8 nC @ 10 V
Vgs (Max)：30V
Input Capacitance (Ciss) (Max) @ Vds：754 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.12W (Ta), 140W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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CDM7-650 TR13 PBFREE

Overview

The CDM7-650 TR13 PBFREE is a silicon N-channel MOSFET manufactured by Central Semiconductor Corp, designed for surface-mount applications. It features a drain-source breakdown voltage of 650V and a continuous drain current rating of 4A. The device utilizes a DPAK (TO-252) package and exhibits a maximum on-resistance of 480 milliohms at a gate-source voltage of 10V. This component is engineered for high-voltage switching operations within power electronics circuits.

Feature Summary

High-voltage capability with a 650V drain-source breakdown rating
Low conduction losses achieved through optimized on-resistance characteristics
Robust thermal management via the DPAK surface-mount package design

Applications

Power Factor Correction (PFC) circuits
High-voltage DC-to-DC converter topologies
Isolated flyback power supply designs

Procurement Notes

Verify the specific suffix against manufacturer documentation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status directly with the supplier prior to integration. Ensure the ordering quantity aligns with factory reel specifications to avoid handling discrepancies during assembly processes.

Selection Notes

Select this component when circuit requirements demand a 650V blocking voltage combined with moderate current handling capabilities. Evaluate the thermal performance within the DPAK footprint against the expected power dissipation levels. Compare the on-resistance value against alternative packages to ensure compatibility with the available board space and cooling infrastructure.

Part Context

This part belongs to the CDM7 series of high-voltage MOSFETs from Central Semiconductor. These devices are specifically engineered for efficient power conversion in industrial and consumer electronics. The series provides a balance of voltage rating and current capacity suitable for compact power supply implementations requiring reliable high-voltage switching performance.