CDMSJ22010-650 SL

$2.55

Description：SUPER JUNCTION MOSFETS
Series：-
Mfr：Central Semiconductor Corp
Package：Tube

SKU:3da03368db0b Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：SUPER JUNCTION MOSFETS
Series：-
Mfr：Central Semiconductor Corp
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：390mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
Vgs (Max)：30V
Input Capacitance (Ciss) (Max) @ Vds：726 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：29.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FP
Package / Case：TO-220-3 Full Pack

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CDMSJ22010-650 SL

Overview

The CDMSJ22010-650 SL is an N-channel Super Junction MOSFET from Central Semiconductor Corp, rated for 650V drain-source voltage and 10A continuous drain current. It features a maximum gate-source voltage of 30V and a typical on-resistance of 390mΩ at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C and utilizes a TO-220FP package.

Feature Summary

High voltage capability with 650V breakdown rating
Low gate charge characteristics for efficient switching
Low on-resistance for reduced conduction losses

Applications

Power Factor Correction (PFC)
TV Power supplies
Uninterruptible Power Supplies (UPS)
PD Chargers
Adapters

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm plating options or packaging variations. Confirm that the requested component matches the exact part number and revision level required for your design specifications before finalizing procurement.

Selection Notes

Select this component for high-voltage applications requiring fast switching speeds and low conduction losses. Ensure thermal management supports the specified power dissipation limits at operating temperatures. Verify compatibility with drive voltages given the threshold voltage range.

Part Context

This device belongs to the CDMSJ series of N-channel Super Junction MOSFETs designed for high-current, high-blocking voltage applications. The series combines high voltage capability with low on-resistance and low gate charge, making it suitable for modern power conversion topologies.