CDMSJ22029-650 SL

$4.57

Description：SUPER JUNCTION MOSFETS
Series：-
Mfr：Central Semiconductor Corp
Package：Tube

SKU:8dfa6af556ab Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：SUPER JUNCTION MOSFETS
Series：-
Mfr：Central Semiconductor Corp
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：130mOhm @ 10.8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：30V
Input Capacitance (Ciss) (Max) @ Vds：1920 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：33W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FP
Package / Case：TO-220-3 Full Pack

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CDMSJ22029-650 SL

Overview

The CDMSJ22029-650 SL is an N-channel Super Junction MOSFET manufactured by Central Semiconductor Corp. It features a drain-source voltage of 650 V and a continuous drain current of 29 A at 25°C, dropping to 17.7 A at 100°C case temperature. The device has a maximum gate-source voltage of 30 V and supports a pulsed drain current of 63 A. Power dissipation is rated at 33 W at 25°C and 14 W at 100°C. The typical on-resistance (RDS(on)) is 130 mΩ at VGS=10V and ID=10.8A. Gate charge (Qg) is typically 51 nC. Operating and storage junction temperatures range from -55°C to +150°C.

Feature Summary

High voltage capability with 650V drain-source rating
Low gate charge for fast switching applications
Low on-resistance combined with high current handling

Applications

Power Factor Correction
TV Power supplies
UPS systems
PD Chargers
Adapters

Procurement Notes

Verify the exact ordering suffix against the manufacturer's current catalog to ensure correct plating options. The base part number may require specific suffixes such as PBFREE or TIN/LEAD depending on environmental compliance requirements. Confirm package type and lead configuration match the TO-220FP mechanical outline specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high blocking voltage and efficient switching performance. The Super Junction technology provides a favorable balance between low conduction losses and reduced switching energy. Ensure thermal management strategies account for the specified power dissipation limits at elevated case temperatures to maintain reliability within the stated operating junction temperature range.

Part Context

This device belongs to the CDMSJ series of N-channel Super Junction MOSFETs from Central Semiconductor. These components are engineered for high-voltage, high-current applications where efficiency and switching speed are critical. The series utilizes advanced semiconductor architecture to achieve superior performance metrics compared to traditional planar MOSFETs in similar voltage classes.