CE3512K2-C1

Overview

The CE3512K2-C1 is a Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) designed for radio frequency applications. It operates at 12 GHz with a typical noise figure of 0.30 dB and an associated gain of 13.7 dB under standard test conditions of VDS = 2 V and ID = 10 mA. The device features a Micro-X plastic package with hollow air cavity construction to minimize parasitic effects. Absolute maximum ratings include a drain-to-source voltage of 4.0 V, a gate-to-source voltage of -3.0 V, and a total power dissipation of 125 mW. Recommended operating ranges specify a drain current between 5 mA and 15 mA.

Feature Summary

• Super low noise figure and high associated gain optimized for sensitive signal reception
• Hollow (air cavity) plastic package construction to reduce thermal resistance and parasitic capacitance
• Gallium arsenide pHEMT technology providing superior RF performance characteristics

Applications

• KU Band Low Noise Block downconverter (LNB) first stage amplification
• High-performance satellite communication receiver front-ends
• Low noise amplifier stages in microwave measurement equipment

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. The datasheet indicates that the C1 suffix corresponds to embossed tape packaging with a width of 8 mm. Confirm that pin 4 (Gate) faces the perforation side of the tape as specified. Ensure compliance with RoHS directives and handle the component according to safety guidelines regarding gallium arsenide materials during disposal.

Selection Notes

Select this component when a low noise figure near 0.30 dB is critical at 12 GHz frequencies. The device requires a supply voltage within the recommended range of +1 V to +3 V and a bias current between 5 mA and 15 mA. Consider the Micro-X package dimensions for PCB layout constraints. Evaluate thermal management requirements against the total power dissipation limit of 125 mW and the channel temperature rating of +150 °C.

Part Context

The CE3512K2-C1 belongs to the CE3512 series of RF low noise FETs manufactured by CEL. This series utilizes GaAs pHEMT technology specifically engineered for Ku-band and K-band applications. The part number designation includes a suffix indicating the specific packaging variant, which affects handling and reflow soldering profiles but does not alter the electrical characteristics of the die itself.

Replacement Considerations

No official substitute part numbers are listed in the provided documentation. When evaluating alternatives, verify that the replacement device offers comparable noise figures and gain at 12 GHz. Ensure the new component supports similar biasing conditions and fits within the same package footprint or allows for necessary design modifications.