CE3514M4

Overview

The CE3514M4 is a gallium arsenide (GaAs) RF low noise field-effect transistor designed for high-frequency applications. It operates within a recommended drain-to-source voltage range of +1V to +3V and a drain current range of 5mA to 15mA. At VDS=2V and ID=10mA, the device achieves a typical noise figure of 0.42dB and an associated gain of 12.2dB at 12GHz. The saturated drain current ranges from 27mA to 68mA, with a transconductance of 54mS to 69mS. It utilizes a flat-lead 4-pin thin-type super minimold package.

Feature Summary

• Low noise figure and high associated gain characteristics
• Original dual mold plastic package construction

Applications

• DBS LNB gain-stage
• DBS LNB mix-stage
• Low noise amplifier for microwave communication systems

Procurement Notes

Verify the specific ordering suffix when purchasing. The datasheet lists CE3514M4-C2 as the order number for the embossed tape packaging variant. Confirm that the received component matches the required package marking and pin configuration before integration into the circuit design.

Selection Notes

Select this component for designs requiring minimal signal degradation at microwave frequencies. Ensure the operating point stays within the recommended voltage and current limits to maintain the specified noise performance. Consider the thermal constraints provided in the total power dissipation graph during system layout.

Part Context

This device belongs to CEL's portfolio of RF low noise FETs. It is manufactured using a GaAs process, which supports its high-frequency operation capabilities. The product documentation indicates it is intended for use in satellite and microwave communication infrastructure where signal integrity is critical.

Replacement Considerations

No official substitute part numbers are listed in the datasheet. When evaluating alternatives, verify that the replacement device offers comparable noise figures and gain at 12GHz while maintaining compatibility with the 4-pin flat-lead package dimensions.