CE3520K3-C1

CE3520K3-C1

$2.94
  • Description:RF MOSFET PHEMT FET 2V 4MICROX
  • Series:-

SKU:b7e290836a80 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 2V 4MICROX
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:pHEMT FET
  • Frequency:20GHz
  • Gain:13.8dB
  • Voltage - Test:2 V
  • Current Rating (Amps):15mA
  • Noise Figure:0.8dB
  • Current - Test:10 mA
  • Power - Output:125mW
  • Voltage - Rated:4 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:4-Micro-X
  • Supplier Device Package:4-Micro-X
  • Configuration:-

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CE3520K3-C1

Overview

The CE3520K3-C1 is a super low noise FET from CEL, operating at 20 GHz and 24 GHz frequencies. It features a hollow plastic package for thermal performance. At 20 GHz with VDS=2V and ID=10mA, it achieves a typical noise figure of 0.55 dB and associated gain of 13.8 dB. At 24 GHz under identical conditions, the noise figure is typically 0.80 dB with 13.9 dB gain. The device operates within a drain-to-source voltage range of +1V to +3V and a drain current range of 5 mA to 15 mA.

Feature Summary

  • Super low noise figure and high associated gain optimized for K-Band applications
  • Hollow (air cavity) Micro-X plastic package design
  • High channel temperature tolerance up to +150 °C

Applications

  • K-Band LNB (Low Noise Block)
  • Doppler Sensor
  • Low Noise Amplifier for microwave communication systems

Procurement Notes

Verify the specific ordering suffix '-C1' corresponds to the embossed tape packaging configuration. Confirm that the pin orientation aligns with the perforation side of the tape as specified in the datasheet. Ensure compliance with RoHS directives and GaAs handling requirements during procurement and assembly processes.

Selection Notes

Select this component when designing circuits requiring minimal noise addition at 20 GHz or 24 GHz. Verify that the biasing network supports the recommended operating range of VDS between +1V and +3V and ID between 5 mA and 15 mA. Consider the hollow package's thermal characteristics for heat dissipation in dense layouts.

Part Context

The CE3520K3-C1 belongs to CEL's family of RF Low Noise FETs designed for high-frequency applications. It utilizes gallium arsenide technology housed in a specialized Micro-X plastic package. This series is engineered to provide superior noise performance compared to standard surface mount alternatives in the K-Band spectrum.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, match the noise figure and gain specifications at 20 GHz and 24 GHz. Ensure the replacement device supports similar biasing conditions and fits the Micro-X package footprint or requires adapter redesign.

FAQ

What is the maximum gate-to-source voltage rating?

The absolute maximum rating for Gate to Source Voltage (VGS) is -3.0 V.

How does the noise figure change between 20 GHz and 24 GHz?

At 20 GHz, the typical noise figure is 0.55 dB. At 24 GHz, it increases to a typical value of 0.80 dB, both measured at VDS = 2 V and ID = 10 mA.

What is the total power dissipation limit?

The total power dissipation (Ptot) is rated at 125 mW at an ambient temperature of +25°C.

CE3520K3-C1CE3520K3-C1
$2.94
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