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The CE3521M4-C2 is a gallium arsenide (GaAs) RF low noise field-effect transistor manufactured by CEL. It utilizes a flat-lead 4-pin thin-type super minimold package and operates at frequencies up to 20 GHz. The device is characterized by a typical noise figure of 0.70 dB and an associated gain of 11.9 dB when biased at VDS = 2 V and ID = 10 mA. Absolute maximum ratings include a drain-to-source voltage of 4.0 V, a gate-to-source voltage of -3.0 V, and total power dissipation of 125 mW. Recommended operating ranges specify a drain current between 5 mA and 15 mA.
Verify the specific ordering suffix C2 corresponds to the embossed tape packaging configuration with an 8 mm wide reel containing 15,000 pieces per reel. Confirm that Pin 1 (source) and Pin 2 (drain) face the perforation side of the tape during handling. Ensure compliance with RoHS directives and observe GaAs safety precautions regarding disposal and ESD protection.
Select this component for applications requiring operation around 20 GHz with minimal signal degradation. Verify that the required bias conditions align with the recommended range of 2 V drain voltage and 10 mA drain current. Consider the thermal constraints imposed by the 125 mW total power dissipation limit and the specified operating temperature range of -55°C to +125°C.
This part belongs to the CE3521 series of RF low noise FETs designed for high-frequency performance. The CE3521M4-C2 variant specifically denotes the packaged version intended for surface mount assembly in compact electronic designs. It serves as a specialized semiconductor solution for microwave frequency bands where low noise characteristics are critical.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, ensure compatibility with the 4-pin super minimold package dimensions and verify that the replacement device meets or exceeds the 20 GHz operational frequency, 0.70 dB noise figure, and 11.9 dB gain specifications under similar bias conditions.