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Product Detailed Parameters
- Description：MOSFET N-CH 20V 100MA SOT883
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.57 nC @ 4.5 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：9 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-883
- Package / Case：SC-101, SOT-883
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Overview
The CEDM7001 TR PBFREE is a surface-mount silicon N-channel enhancement-mode MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process designed for high-speed pulsed amplifier and driver applications. The device features a low profile SOT-883L package with a height of 0.4mm. Key electrical parameters include a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of 10V, and a continuous drain current (ID) of 100mA. Power dissipation is rated at 100mW. The threshold voltage (VGS(th)) ranges from 0.6V to 0.9V, while the on-resistance (rDS(on)) varies between 0.9Ω and 4.0Ω depending on gate drive conditions.
Feature Summary
- Logic level compatible design enabling direct interface with standard logic circuits
- Low threshold voltage facilitating efficient switching at low gate drive levels
- Small leadless surface mount package offering minimal board space utilization
Applications
- Load and power switches
- DC-DC converters
- Battery powered portable equipment
Procurement Notes
Verify that the ordering suffix 'TR PBFREE' corresponds to the specific tape-and-reel packaging configuration required for automated assembly processes. Confirm compliance with RoHS directives and absence of lead plating if specified in procurement requirements. Ensure the component matches the exact manufacturer part number to guarantee alignment with the provided datasheet specifications and reliability standards.
Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance and logic-level compatibility is required for portable or battery-operated designs. Consider the 20V drain-source voltage rating and 100mA continuous current capability against circuit load demands. Evaluate the thermal performance within the 100mW power dissipation limit and ensure the operating temperature range meets environmental constraints.
Part Context
This component belongs to the Central Semiconductor enhancement-mode MOSFET family, specifically utilizing N-Channel DMOS technology. It is functionally complementary to the P-channel variant, identified as the CEDM8001. The device is housed in the SOT-883L case, which provides a distinct low-profile footprint compared to other packages in the series such as the SOT-953 or SOT-523.
Replacement Considerations
The datasheet identifies the CEDM8001 as the complementary P-channel device. No other direct substitute part numbers are documented in the provided source material.
