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Product Detailed Parameters
- Description：300MA 60V SMD MOSFET N-CHANNEL E
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：500 pC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-883L
- Package / Case：SC-101, SOT-883
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Overview
The CEDM7002AE BK PBFREE is a single N-channel silicon MOSFET manufactured by Central Semiconductor Corp. It features a 60V drain-source breakdown voltage and a continuous drain current of 300mA. The device has a maximum on-resistance of 1.4 ohms and a gate charge of 500 picocoulombs. It operates within a temperature range of -65°C to +150°C with a power dissipation of 100mW.
Feature Summary
- N-channel enhancement mode silicon construction
- ESD protection capability integrated into the design
- Surface mount package configuration for automated assembly
Applications
- Low voltage switching circuits
- Signal path control applications
- General purpose electronic circuitry
Procurement Notes
Verify the specific manufacturer part number against official Central Semiconductor documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with required operating temperatures and voltage ratings before integration into final designs.
Selection Notes
Select this component for applications requiring low voltage N-channel switching with moderate current handling capabilities. Consider the 1.4 ohm on-resistance and 100mW power dissipation limits when designing thermal management solutions for the target environment.
Part Context
This component belongs to the Central Semiconductor discrete transistor portfolio, specifically designed as a small signal field-effect transistor. It utilizes standard silicon technology suitable for general-purpose electronic applications requiring reliable switching performance in compact surface mount packages.
Replacement Considerations
Consult official datasheets for cross-reference information. Verify pinout compatibility and electrical parameter equivalence before substituting with alternative manufacturers' components.
