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Product Detailed Parameters
- Description：MOSFET N-CH 60V 300MA SOT883L
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
- Vgs (Max)：20V
- Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-883L
- Package / Case：SC-101, SOT-883
Download product information
Overview
The CEDM7002AE TR PBFREE is an enhanced specification surface mount silicon N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features integrated ESD protection up to 1800V, low gate charge, and low on-resistance. Key electrical parameters include a drain-source voltage of 60V, continuous drain current of 300mA, and power dissipation of 100mW at 25°C ambient temperature. The device operates within a junction temperature range of -65°C to +150°C.
Feature Summary
- Integrated electrostatic discharge (ESD) protection rated up to 1800V
- Optimized for high-speed pulsed amplifier and driver applications
- Low gate charge characteristics for efficient switching performance
- Low drain-source on-resistance to minimize conduction losses
Applications
- Load and power switches
- DC-DC converter circuits
- Power management systems
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm plating options. The standard configuration utilizes lead-free plating. Confirm package type and thermal resistance specifications match design requirements before procurement. Ensure compatibility with automated assembly processes for the SOT-883L case.
Selection Notes
Select this component for designs requiring robust ESD protection in compact surface-mount packages. Evaluate thermal constraints carefully due to the specified power dissipation limit. Compare gate charge values against drive circuit capabilities to ensure optimal switching speeds. Verify that the maximum voltage ratings accommodate peak transient conditions in the target application.
Part Context
This part is an enhanced specification variant of the standard 2N7002 N-channel MOSFET. It retains the core functionality while adding specialized ESD protection features. The device is manufactured by Central Semiconductor Corp and utilizes the SOT-883L case outline for surface mounting.
Replacement Considerations
Direct substitutes may include other 60V N-channel MOSFETs in similar small outlines. Verify pinout compatibility and thermal resistance values when considering alternatives from different manufacturers.
