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Product Detailed Parameters
- Description：MOSFET P-CH 20V 100MA SOT883
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.66 nC @ 4.5 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-883
- Package / Case：SC-101, SOT-883
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Overview
The Central Semiconductor CEDM8001 BK PBFREE is a surface-mount silicon P-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features a low threshold voltage and low on-resistance, ensuring logic level compatibility. The device operates within a junction temperature range of -65 to +150 °C. Key electrical parameters include a drain-source voltage of 20 V, a gate-source voltage of 10 V, and a continuous drain current of 100 mA steady state or 200 mA. Power dissipation is rated at 100 mW.
Feature Summary
- Low on-resistance and low threshold voltage for efficient switching
- Logic level compatible operation
- Small leadless surface mount package with a 0.4 mm profile
Applications
- Load and power switches
- DC-DC converters
- Battery-powered portable equipment
Procurement Notes
Verify the specific ordering suffix required for your manufacturing process. The standard configuration utilizes a Pb-free plating finish. Confirm that the selected package variant matches your PCB footprint requirements. Ensure all design parameters remain within the absolute maximum ratings specified in the official datasheet to prevent device failure.
Selection Notes
Select this component when a compact P-channel MOSFET is required for low-voltage switching applications. The CEDM8001 offers a balance of speed and drive capability suitable for logic-controlled circuits. Consider the complementary N-channel CEDM7001 if a matched pair is needed for bridge configurations. Evaluate thermal constraints carefully due to the limited power dissipation rating.
Part Context
This part belongs to the Central Semiconductor DMOS family of surface-mount transistors. It is manufactured using a P-channel DMOS process optimized for performance in small packages. The CEDM8001 serves as the P-channel counterpart to the N-channel CEDM7001, providing designers with options for complementary circuit topologies.
Replacement Considerations
The datasheet identifies the CEDM7001 as the complementary N-channel device. No other direct substitute part numbers are documented in the provided source material.
