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The CEDM8001VL TR PBFREE is a surface-mount silicon P-channel enhancement-mode MOSFET housed in the SOT-883VL package. It features a maximum drain-source voltage of 20 V and a gate-source voltage rating of 10 V. The device supports a continuous steady-state drain current of 100 mA, with a peak current capability of 200 mA. Power dissipation is rated at 100 mW at 25°C ambient temperature. Electrical characteristics include a threshold voltage ranging from 0.6 V to 1.1 V and an on-resistance of up to 8.0 Ω at VGS=4.0V. Total gate charge is typically 0.658 nC.
Verify component status carefully as Central Semiconductor has issued a discontinuation notice for all devices manufactured in the SOT-883VL package. This product is classified as End of Life (EOL). Orders are restricted to available inventory only. Confirm availability directly with the manufacturer or authorized distributors before finalizing procurement plans.
Select this component when a P-channel MOSFET with a 20 V rating and extremely low physical profile is required. Ensure the design accommodates the 100 mW power dissipation limit. Verify that the SOT-883VL footprint matches the PCB layout. Consider the discontinued status during long-term production planning.
This part belongs to the CEDM series of surface-mount silicon MOSFETs produced by Central Semiconductor Corp. It serves as the P-channel counterpart to the complementary N-channel device, the CEDM7001VL. Both utilize the specialized SOT-883VL case designed specifically for ultra-low height requirements in compact electronic assemblies.
No replacement part numbers are currently available from Central Semiconductor for this specific model. The manufacturer indicates that no alternate source products have been identified for the discontinued SOT-883VL package family. Contact engineering support for potential alternative sourcing assistance.
The maximum operating and storage junction temperature range is -65°C to +150°C.
Yes, the datasheet specifies that the device features logic level compatibility.