CEDM8001VL TR PBFREE

CEDM8001VL TR PBFREE

$0.32
  • Description:MOSFET P-CH 20V 100MA SOT883VL
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:10f14ed75587 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 20V 100MA SOT883VL
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
  • Rds On (Max) @ Id, Vgs:8Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.66 nC @ 4.5 V
  • Vgs (Max):10V
  • Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 3 V
  • FET Feature:-
  • Power Dissipation (Max):100mW (Ta)
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-883VL
  • Package / Case:SC-101, SOT-883

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CEDM8001VL TR PBFREE

Overview

The CEDM8001VL TR PBFREE is a surface-mount silicon P-channel enhancement-mode MOSFET housed in the SOT-883VL package. It features a maximum drain-source voltage of 20 V and a gate-source voltage rating of 10 V. The device supports a continuous steady-state drain current of 100 mA, with a peak current capability of 200 mA. Power dissipation is rated at 100 mW at 25°C ambient temperature. Electrical characteristics include a threshold voltage ranging from 0.6 V to 1.1 V and an on-resistance of up to 8.0 Ω at VGS=4.0V. Total gate charge is typically 0.658 nC.

Feature Summary

  • Designed for space-constrained high-speed amplifier and driver applications requiring minimal package height.
  • Offers low on-resistance and low gate charge for efficient switching performance.
  • Features logic level compatibility and a very low profile package construction.

Applications

  • Load and power switches
  • DC-DC converters
  • Battery-powered portable equipment

Procurement Notes

Verify component status carefully as Central Semiconductor has issued a discontinuation notice for all devices manufactured in the SOT-883VL package. This product is classified as End of Life (EOL). Orders are restricted to available inventory only. Confirm availability directly with the manufacturer or authorized distributors before finalizing procurement plans.

Selection Notes

Select this component when a P-channel MOSFET with a 20 V rating and extremely low physical profile is required. Ensure the design accommodates the 100 mW power dissipation limit. Verify that the SOT-883VL footprint matches the PCB layout. Consider the discontinued status during long-term production planning.

Part Context

This part belongs to the CEDM series of surface-mount silicon MOSFETs produced by Central Semiconductor Corp. It serves as the P-channel counterpart to the complementary N-channel device, the CEDM7001VL. Both utilize the specialized SOT-883VL case designed specifically for ultra-low height requirements in compact electronic assemblies.

Replacement Considerations

No replacement part numbers are currently available from Central Semiconductor for this specific model. The manufacturer indicates that no alternate source products have been identified for the discontinued SOT-883VL package family. Contact engineering support for potential alternative sourcing assistance.

FAQ

What is the maximum operating junction temperature for the CEDM8001VL?

The maximum operating and storage junction temperature range is -65°C to +150°C.

Is the CEDM8001VL compatible with standard logic levels?

Yes, the datasheet specifies that the device features logic level compatibility.

CEDM8001VL TR PBFREECEDM8001VL TR PBFREE
$0.32
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