CEDM8004 BK PBFREE

$0.14

Description：MOSFET P-CH 30V 450MA SOT883
Series：-
Mfr：Central Semiconductor Corp
Package：Box

SKU:d5527872aa10 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 450MA SOT883
Series：-
Mfr：Central Semiconductor Corp
Package：Box
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1.1Ohm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.88 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：55 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：100mW (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-883
Package / Case：SC-101, SOT-883

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CEDM8004 BK PBFREE

Overview

The Central Semiconductor CEDM8004 BK PBFREE is a surface-mount silicon P-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It features a low profile SOT-883L package with a maximum drain-source voltage of 30V and continuous drain current of 450mA. The device offers low on-resistance, such as 1.1Ω at VGS=4.5V, and a logic-level compatible threshold voltage of 1.0V typical. It includes ESD protection up to 2kV and operates within a junction temperature range of -65°C to +150°C.

Feature Summary

Logic level compatible operation with low threshold voltage
ESD protection capability up to 2kV
Low package profile design

Applications

Load and power switches
Power supply converter circuits
Battery powered portable devices

Procurement Notes

Verify the specific ordering suffix required for your manufacturing process. The standard designation includes PBFREE, indicating lead-free plating. Confirm if Tin/Lead plating is needed by adding the appropriate suffix. Ensure the SOT-883L package dimensions align with your PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low on-resistance and fast switching characteristics. The 30V rating suits low-voltage applications. Consider the thermal resistance values when determining heat dissipation needs in enclosed spaces. Verify gate drive voltages match the logic level compatibility specifications.

Part Context

This part belongs to the CEDM series of surface-mount silicon P-channel enhancement-mode MOSFETs manufactured by Central Semiconductor Corp. It utilizes a DMOS process technology optimized for speed and efficiency. The complementary N-channel version is the CEDM7004. The device is housed in an R8 (SOT-883L) case configuration.

Replacement Considerations

The datasheet identifies the CEDM7004 as the complementary N-channel device. No other direct substitute part numbers are documented in the provided source material.