CG2H40010F

CG2H40010F

$70.15
  • Description:RF MOSFET HEMT 28V 440166
  • Series:GaN

SKU:20d2b7132e54 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 28V 440166
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:8GHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:-
  • Voltage - Rated:120 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:440166
  • Supplier Device Package:440166
  • Configuration:-

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CG2H40010F

Overview

The CG2H40010F is an unmatched Gallium Nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28 V rail, it delivers up to 8 GHz bandwidth with typical small signal gains of 18 dB at 2.0 GHz and 16 dB at 4.0 GHz. The device achieves a typical saturated output power (PSAT) of 17 W and drain efficiency of 70% at PSAT. It features a 120 V Drain-Source breakdown voltage, 1.5 A maximum drain current, and operates within a junction temperature range up to 225°C. The component utilizes the 440166 solderdown pill package.

Feature Summary

  • Broadband operation capability extending up to 8 GHz
  • High power density with typical saturated output power of 17 W
  • Optimized for linear and compressed amplifier circuits
  • Large signal models available for ADS and MWO simulation

Applications

  • Broadband amplifiers
  • Cellular infrastructure
  • Test instrumentation
  • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

Procurement Notes

Verify the specific package type required for the application, as the CG2H40010F corresponds to the 440166 solderdown pill configuration. Confirm that the design accommodates the specified thermal resistance and case operating temperature limits. Ensure proper handling procedures are followed due to the electrostatic discharge classification levels defined in the datasheet.

Selection Notes

Select this component for designs requiring wide bandwidth and high power efficiency across the S-band and C-band frequencies. Evaluate the impedance matching network using the provided source and load impedances table to optimize performance. Consider the thermal management requirements based on the power dissipation de-rating curve to maintain reliability under continuous wave operation.

Part Context

The CG2H40010F belongs to the CG2H40010 family of GaN HEMTs manufactured by MACOM Technology Solutions. It shares core electrical characteristics with the CG2H40010P but differs in physical packaging. The F suffix specifically denotes the 440166 surface-mount compatible pill package, distinguishing it from the flange-mounted P variant.

Replacement Considerations

The CG2H40010P serves as a functional equivalent within the same family but utilizes the 440196 screw-down flange package. Substitution requires mechanical redesign to accommodate the different mounting style and thermal interface. Electrical parameters remain consistent between the two package options.

CG2H40010FCG2H40010F
$70.15
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