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The CG2H40010F is an unmatched Gallium Nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28 V rail, it delivers up to 8 GHz bandwidth with typical small signal gains of 18 dB at 2.0 GHz and 16 dB at 4.0 GHz. The device achieves a typical saturated output power (PSAT) of 17 W and drain efficiency of 70% at PSAT. It features a 120 V Drain-Source breakdown voltage, 1.5 A maximum drain current, and operates within a junction temperature range up to 225°C. The component utilizes the 440166 solderdown pill package.
Verify the specific package type required for the application, as the CG2H40010F corresponds to the 440166 solderdown pill configuration. Confirm that the design accommodates the specified thermal resistance and case operating temperature limits. Ensure proper handling procedures are followed due to the electrostatic discharge classification levels defined in the datasheet.
Select this component for designs requiring wide bandwidth and high power efficiency across the S-band and C-band frequencies. Evaluate the impedance matching network using the provided source and load impedances table to optimize performance. Consider the thermal management requirements based on the power dissipation de-rating curve to maintain reliability under continuous wave operation.
The CG2H40010F belongs to the CG2H40010 family of GaN HEMTs manufactured by MACOM Technology Solutions. It shares core electrical characteristics with the CG2H40010P but differs in physical packaging. The F suffix specifically denotes the 440166 surface-mount compatible pill package, distinguishing it from the flange-mounted P variant.
The CG2H40010P serves as a functional equivalent within the same family but utilizes the 440196 screw-down flange package. Substitution requires mechanical redesign to accommodate the different mounting style and thermal interface. Electrical parameters remain consistent between the two package options.