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The CG2H40010P is a Gallium Nitride (GaN) High-Electron-Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It operates from a 28 V supply rail and supports frequencies up to 8 GHz. The device delivers a small-signal gain of 16.5 dB with a continuous drain current of 100 mA. Designed for high efficiency and wide bandwidth, it is housed in the 440166 package. This component serves as a general-purpose RF solution suitable for linear and compressed amplifier circuits across various microwave applications.
Verify the specific suffix 'P' against the official MACOM datasheet to confirm package type and marking details. Ensure compliance with RoHS3 standards and check for any Product Change Notifications (PCNs) regarding assembly or material updates before finalizing procurement plans.
Select this component when an 8 GHz operational limit is required, distinguishing it from the standard CGH40010 series which tops out at 6 GHz. Confirm that the 28 V operating voltage and 100 mA current rating align with the system's power budget and thermal management capabilities.
This part belongs to the CG2H40010 family, representing an extended frequency variant of the widely used CGH40010 series. While sharing similar electrical characteristics, the CG2H40010P specifically targets applications requiring performance beyond the 6 GHz threshold of its predecessor.
The CGH40010F is a direct functional alternative within the same family but is limited to 6 GHz operation. Verify if the reduced bandwidth of the CGH40010F meets the specific application requirements before considering substitution.