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The CG2H40035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28 V rail, it delivers up to 35 W of output power across a DC to 6 GHz frequency range. The device features a typical saturated output power (PSAT) of 40 W with a drain efficiency of 64% at saturation. It provides a small signal gain of 14 dB at 3.5 GHz. Packaged in the solder-down 440166 pill format, it supports Class A, AB, and linear amplification for complex waveforms including OFDM and W-CDMA.
Verify the specific package type required for the application, as the F suffix denotes the solder-down pill package (440166). Confirm that the design accommodates the thermal requirements associated with the junction-to-case thermal resistance. Ensure compatibility with the provided large signal models if using ADS or MWO simulation tools for circuit validation.
Select this component when a general-purpose, high-efficiency GaN solution is needed for frequencies up to 6 GHz. The 28 V operating voltage aligns with standard RF power supply rails. Consider the 440166 pill package for surface mount assembly where screw-mount flange packages are not suitable. Evaluate thermal management capabilities against the specified maximum case operating temperature limits.
This part belongs to the second-generation CG2H40035 family of GaN HEMTs from MACOM Technology Solutions. It is offered alongside the CG2H40035P variant, which utilizes a screw-down flange package (440196). Both variants share identical electrical characteristics but differ in mechanical mounting configurations to suit different PCB layout and thermal dissipation strategies.
No official substitute part numbers are documented in the datasheet. Designers requiring a similar performance profile should evaluate other MACOM CG2H series devices. Verify that any alternative component matches the 28 V operating voltage, 6 GHz bandwidth, and compatible package footprint or thermal interface specifications.