CG2H40120F

Overview

The CG2H40120 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for RF and microwave applications. It operates from a 28 V rail with a Drain-Source Breakdown Voltage of 84 V and an absolute maximum rating of 120 V. The device delivers a saturated output power (PSAT) of 130 W at 1.3 GHz, achieving a drain efficiency of 72% under these conditions. Small signal gain reaches 20 dB at 1 GHz and 15 dB at 2 GHz. It supports operation up to 2.5 GHz and features a Gate Threshold Voltage ranging from -3.8 V to -2.3 V. The transistor is available in flange (Package 440223) and pill (Package 440206) configurations.

Feature Summary

• High-efficiency GaN HEMT technology providing high gain and wide bandwidth capabilities
• Robust output mismatch stress tolerance without damage across all phase angles
• Broadband performance suitable for both linear and compressed amplifier circuits

Applications

• 2-Way Private Radio systems
• Broadband Amplifiers
• Test Instrumentation

Procurement Notes

Verify the specific package variant required for the design, as the CG2H40120F corresponds to the flange package and the CG2H40120P corresponds to the pill package. Ensure that handling procedures account for electrostatic discharge sensitivity, classifying the device as HBM Class 1A and CDM Class C3. Confirm compliance with current RoHS EU directives before finalizing procurement specifications.

Selection Notes

Select the CG2H40120 for general-purpose broadband RF and microwave designs requiring high power density. The device is optimized for operation at 28 V. Consider the thermal resistance values when designing heat sinks, noting the junction temperature limit of +225°C. Large signal models are available for ADS and MWO simulation tools to assist in circuit design and stability analysis.

Part Context

This component belongs to MACOM's portfolio of RF Power GaN HEMTs. It is part of the CG2H40xxx series, which includes variants like the CG2H40010F and CG2H40025F. These devices share similar technological foundations but differ in power ratings and frequency characteristics. The CG2H40120 specifically targets higher power applications compared to lower-wattage counterparts in the same family.

Replacement Considerations

Direct substitutes are not explicitly listed in the datasheet. Designers should evaluate other MACOM GaN HEMTs within the CG2H40xxx series based on power and frequency requirements. Cross-compatibility requires careful verification of pinouts, package dimensions (440223 vs 440206), and electrical parameters such as breakdown voltage and gain.