CG2H80015D-GP4

Overview

The CG2H80015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) bare die designed for high-power, broadband applications. It operates up to 8.0 GHz with a drain-source breakdown voltage of 120 V and a gate-to-source voltage range of -10 V to +2 V. The device delivers a typical saturated output power (PSAT) of 15 W at 4 GHz with a drain efficiency of 65% under a 28 V bias. Small signal gain reaches 17 dB at 4 GHz and 12 dB at 8 GHz. Key electrical parameters include a maximum drain current of 1.5 A, a threshold voltage between -3.8 V and -2.3 V, and an on-resistance of 0.67 Ω. Thermal resistance from junction to case is 5.1 °C/W for the die-only configuration.

Feature Summary

• High breakdown voltage capability supporting robust operation in demanding RF environments
• Broadband performance suitable for wide frequency ranges up to 8 GHz
• High power density and efficiency optimized for linear amplifier classes
• Bare die format utilizing non-adhesive tacky membrane immobilization during shipment

Applications

• Cellular infrastructure base stations
• Broadband amplifiers
• Test instrumentation systems
• Linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and handling requirements. Ensure that procurement channels provide authentic components with traceable origin. Confirm compliance with relevant environmental standards such as RoHS before finalizing purchase orders.

Selection Notes

Select this component for designs requiring high linearity and power density in the microwave spectrum. Evaluate thermal management strategies carefully due to the bare die form factor. Consider the required gate bias voltages and ensure the driving circuitry supports the specified threshold voltage range for optimal performance.

Part Context

This part belongs to MACOM's GaN HEMT portfolio, leveraging silicon substrate technology for cost-effective high-performance solutions. It serves as a discrete active element intended for integration into custom RF modules or multi-chip modules by system integrators.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, compare small-signal gain, saturation power, and thermal resistance characteristics. Verify that any replacement matches the operating voltage limits and frequency response requirements of the original design.

FAQ

What is the recommended solder material for mounting this die?

The datasheet recommends using AuSn (80/20) solder for eutectic die attachment.

How is the bare die protected during shipping?

The bare dies are shipped in Gel-Pak containers with a non-adhesive tacky membrane that immobilizes the die to prevent movement.

What is the maximum forward gate current rating?

The maximum forward gate current is rated at 4.0 mA at a case temperature of 25°C.