CG2H80030D-GP4

Overview

The CG2H80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die designed for high-power, high-frequency applications. It operates at frequencies up to 8.0 GHz with a typical saturated output power of 30 W and drain efficiency of 65% at 4 GHz under 28 V bias. The device features a breakdown voltage of 120 V and supports junction temperatures up to 225°C. Small signal gain ranges from 17 dB at 4 GHz to 12 dB at 8 GHz. Key electrical parameters include a gate threshold voltage of -3.0 V, on-resistance of 0.33 Ω, and input/output capacitance of 7.3 pF and 2.2 pF respectively.

Feature Summary

• High breakdown voltage capability supporting robust operation
• High temperature operation suitable for demanding thermal environments
• Wide bandwidth performance extending up to 8 GHz
• High efficiency characteristics optimized for power amplification

Applications

• 2-Way Private Radio systems
• Broadband Amplifiers
• Cellular infrastructure equipment
• Test Instrumentation devices
• Linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to confirm packaging details. The standard part number corresponds to bare die shipped in Gel-Pak containers. Ensure procurement channels provide valid traceability and authenticity certificates for sensitive RF semiconductor components.

Selection Notes

Select this component for designs requiring high power density and wide bandwidth in the UHF to S-band spectrum. Consider the 28 V operating voltage and thermal management requirements for junction temperatures up to 225°C. Evaluate the need for large signal models compatible with ADS or MWO for accurate circuit simulation before finalizing the design.

Part Context

This component belongs to MACOM's portfolio of GaN HEMT technologies, leveraging superior material properties such as higher breakdown voltage and thermal conductivity compared to silicon or GaAs alternatives. It is positioned for commercial and industrial RF power applications where size, weight, and efficiency are critical constraints.

Replacement Considerations

No official substitute part numbers are listed in the datasheet. Engineers should evaluate cross-compatibility based on matching key parameters: 30 W output power, 8 GHz frequency range, 28 V drain voltage, and similar package dimensions for die attachment.