CGH27015P

Overview

The CGH27015P is a discrete Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) manufactured by MACOM Technology Solutions. It operates within the 2.3 GHz to 2.9 GHz frequency range and delivers an output power of 15 W. The device features a gain of 15 dB and requires a test voltage of 28 V. Designed for high efficiency and wide bandwidth, it utilizes a Pill package suitable for surface mount applications in RF power amplifier circuits.

Feature Summary

• High electron mobility transistor technology for enhanced performance
• Optimized for high efficiency and wide bandwidth operation
• Designed for high gain applications in RF power amplifiers

Applications

• Wireless communication devices
• Base station power amplifiers
• S-band radar systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revisions match specific production batches. Ensure handling procedures comply with electrostatic discharge protocols during storage and assembly. Validate package integrity upon receipt to prevent physical damage prior to installation.

Selection Notes

Select this component for designs requiring 15 W output power in the 2.3–2.9 GHz band. Consider the 28 V operating requirement and surface mount packaging constraints. Evaluate thermal management needs based on the Pill package specifications. Compare against alternative GaN HEMTs if different frequency ranges or power levels are required.

Part Context

This device belongs to the CGH27015 series of GaN-on-SiC transistors from MACOM. These components represent next-generation RF power solutions offering industry-leading gain and efficiency. The series targets demanding applications where size, weight, and power performance are critical factors in system design.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult official MACOM resources for potential cross-reference options.