CGH27030P

Overview

The CGH27030P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for linear communications from VHF to 3.0 GHz. It operates at a drain-source voltage of 28 V and delivers 30 W peak power capability with 15 dB small signal gain. The device features a 440196 package, supports a maximum operating junction temperature of 225 °C, and provides a drain efficiency of 28% at 4 W average power.

Feature Summary

• Designed for high efficiency, high gain, and wide bandwidth capabilities in linear applications
• Capable of supporting WiMAX Fixed Access 802.16-2004 OFDM and Mobile Access 802.16e OFDMA standards
• Available in screw-down flange and solder-down pill packages

Applications

• VHF amplifier applications
• 3G, 4G, LTE amplifier applications
• 2.3-2.9 GHz WiMAX and BWA amplifier applications

Procurement Notes

Verify the specific package type required for your application, as the CGH27030 series includes both the 440196 (CGH27030P) and 440166 (CGH27030F) packages. Confirm that the thermal management design accommodates the specified maximum case operating temperature and power dissipation limits under your intended bias conditions.

Selection Notes

Select this component when designing amplifiers requiring operation across the VHF to 3.0 GHz range with high linearity. Ensure the circuit design accounts for the 28 V drain voltage requirement and utilizes appropriate source/load impedances for optimal power gain and stability at lower frequencies.

Part Context

The CGH27030P belongs to the CGH27030 family of GaN HEMTs manufactured by MACOM Technology Solutions. This family is engineered specifically for linear communication systems, offering unmatched performance metrics compared to traditional technologies in the VHF through 3 GHz spectrum.

Replacement Considerations

The CGH27030F serves as a direct functional alternative within the same product family, differing primarily in its 440166 solder-down pill package configuration rather than electrical characteristics.

FAQ

What is the maximum forward gate current rating?

The absolute maximum rating for forward gate current is 4.0 mA at a case temperature of 25 °C.

Does the device support high output mismatch stress?

Yes, the device can withstand an output mismatch stress VSWR of up to 10:1 at all phase angles without damage when operated at 4.0 W OFDM average power.

Is large signal modeling data available?

Large signal models compatible with ADS and MWO are available for the CGH27030 series.