CGH27030S

$64.76

Description：RF MOSFET HEMT 28V 12DFN
Series：GaN

SKU:e7f47db91a3d Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET HEMT 28V 12DFN
Series：GaN
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：HEMT
Frequency：6GHz
Gain：18.3dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：200 mA
Power - Output：30W
Voltage - Rated：84 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：12-VFDFN Exposed Pad
Supplier Device Package：12-DFN (4x3)
Configuration：-

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CGH27030S

Overview

The CGH27030S is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency, gain, and wide bandwidth. It operates from a 28 V rail with a typical output power of 30 W across DC to 6.0 GHz. The device features a 120 V drain-source breakdown voltage and a maximum forward gate current of 7.2 mA. It is housed in a 3 mm x 4 mm surface-mount dual-flat-no-lead (DFN) package.

Feature Summary

Designed specifically for high efficiency, high gain, and wide bandwidth capabilities
Operates from a 28 volt rail
Available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package

Applications

LTE amplifier applications
4G Telecom amplifier applications
BWA amplifier applications

Procurement Notes

Verify the specific datasheet revision and ordering information directly with MACOM Technology Solutions or authorized distributors before procurement. Confirm that the component meets all absolute maximum ratings and thermal resistance requirements for your specific application environment. Ensure proper handling procedures are followed due to the moisture sensitivity level classification.

Selection Notes

Select this component when designing amplifiers requiring high efficiency and wide bandwidth in the sub-6 GHz range. Consider the 3x4 DFN package dimensions for space-constrained designs. Evaluate the need for APD and DPD correction based on the target linearity and efficiency requirements at the operating frequency.

Part Context

This part belongs to MACOM's GaN HEMT portfolio, which includes various frequencies and power levels. The CGH27030S is optimized for telecom infrastructure. Related parts include test boards like CGH27030S-AMP1 and CGH27030S-AMP2 for evaluation purposes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM for potential alternatives within their GaN HEMT lineup if this specific part is unavailable.