CGH27060F

Overview

The CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for linear communications from VHF to 3 GHz. It operates at a drain-source voltage of 28 V with a maximum rating of 120 V and delivers up to 60 W peak output power. The device provides approximately 14 dB small signal gain and achieves 27% drain efficiency at 8 W average power. It features an 84 V breakdown voltage, 6 A maximum drain current, and a junction-to-case thermal resistance of 2.8 °C/W. The component is housed in the 440193 ceramic/metal flange package.

Feature Summary

• Designed for high efficiency, high gain, and wide bandwidth capabilities across VHF to 3 GHz frequencies
• Capable of maintaining low Error Vector Magnitude (EVM) under WiMAX Fixed Access 802.16-2004 OFDM conditions
• Supplied in a robust ceramic/metal flange package suitable for demanding RF environments

Applications

• VHF amplifier applications
• 3G, 4G, LTE broadband amplifiers
• 2.3-2.9 GHz WiMAX and BWA amplifier applications
• WiMAX Mobile Access 802.16e OFDMA systems

Procurement Notes

Verify the specific package type 440193 and ensure compatibility with the required mounting torque of 40 in-oz. Confirm that the operating case temperature range of -40°C to +150°C aligns with the system's thermal management design. Check for RoHS3 compliance status and verify the availability of large signal models for ADS and MWO simulation tools prior to finalizing procurement specifications.

Selection Notes

Select this component when designing linear amplifiers requiring high power density and wide bandwidth operation between VHF and 3 GHz. Ensure the bias circuit supports a drain voltage of 28 V and a quiescent current of 300 mA. Consider the thermal resistance of 2.8 °C/W for heat sink sizing. Verify that the application requires the specific 440193 flange package form factor for mechanical integration.

Part Context

This part belongs to MACOM's GaN HEMT portfolio, specifically engineered for linear communication applications. It complements other devices in the series by offering a balance of high peak power and linearity within a ruggedized ceramic/metal flange package. The technology leverages Gallium Nitride on Silicon Carbide properties to achieve superior performance metrics compared to traditional silicon-based transistors in similar frequency bands.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Do not assume cross-compatibility with other packages or voltage ratings without explicit manufacturer confirmation.