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The CGH35060F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for high efficiency and gain. It operates within a frequency range of 3.1 GHz to 3.5 GHz, delivering an output power of 60 W (47.6 dBm). The device features a drain-source breakdown voltage of 120 V and supports a continuous drain current of 6 A. With a typical gain of 12 dB, it utilizes a flange package (440193) suitable for chassis mounting. The component functions reliably across a temperature range from -40°C to +150°C.
Verify the specific datasheet version when sourcing, as MACOM may update technical specifications over time. Confirm that the required package variant matches the application's mechanical constraints, noting the standard flange configuration. Ensure compatibility with existing thermal management solutions given the power dissipation requirements. Cross-reference the manufacturer part number with authorized distributors to guarantee authenticity and traceability of the semiconductor components.
Select this component for applications requiring high power density and efficiency in the C-band spectrum. Consider the 120 V breakdown rating for robustness against voltage transients. Evaluate the thermal resistance of the flange mount against the system's heat sink capabilities. Compare the 60 W output capability against alternative devices to ensure adequate power headroom for the intended design margin and operational longevity.
This device belongs to MACOM's CGH series of GaN HEMTs, which are engineered for demanding RF environments. The series typically includes variants optimized for different frequency bands and power levels. The CGH35060F2 specifically targets the 3.1-3.5 GHz range, distinguishing itself through its balance of high output power and gain compared to lower-power or wider-bandwidth siblings in the broader portfolio.
Public confirmed substitute part numbers: CGH35060F2/P2.