CGH40006S

Overview

The CGH40006S is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF and microwave applications. Operating from a 28 V rail, it provides broadband performance up to 6 GHz. The device delivers 13 dB small signal gain at 2.0 GHz and 11 dB at 6.0 GHz. It achieves 8 W typical output power at an input of 32 dBm with 65% efficiency. Packaged in a 3mm x 3mm surface mount quad-flat-no-lead (QFN) format, the transistor supports linear and compressed amplifier circuits.

Feature Summary

• Broadband operation capability extending up to 6 GHz
• High drain efficiency reaching 65% under specified conditions
• Suitable for linear and compressed amplifier topologies

Applications

• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

Procurement Notes

Verify the specific package type 440203 and revision level against the latest official datasheet before procurement. Confirm thermal management requirements align with the junction-to-case resistance specifications provided by the manufacturer. Ensure compatibility with large signal models available for ADS and MWO during the design phase.

Selection Notes

Select this component for designs requiring a general-purpose GaN HEMT solution operating at 28 volts. Consider the 3mm x 3mm QFN package dimensions for board space constraints. Evaluate thermal dissipation capabilities based on the maximum case operating temperature limits defined in the absolute maximum ratings section of the documentation.

Part Context

This part belongs to the MACOM CGH40 series of GaN on SiC transistors. It is distinct from the CGH40006S-AMP1, which is a test board containing the installed transistor rather than the discrete component itself. The CGH40006S serves as the active semiconductor element within that demonstration assembly.

Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage rating is 120 V at a case temperature of 25°C.

Is the device stable at low frequencies?

When using the device at low frequencies, series resistors should be used to maintain amplifier stability.

What is the moisture sensitivity classification?

The Moisture Sensitivity Level (MSL) is classified as Level 3, corresponding to 168 hours according to IPC/JEDEC J-STD-20.