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Product Detailed Parameters
- Description：RF MOSFET HEMT 28V 440193
- Series：GaN
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：HEMT
- Frequency：0Hz ~ 4GHz
- Gain：14dB
- Voltage - Test：28 V
- Current Rating (Amps)：10.5A
- Noise Figure：-
- Current - Test：500 mA
- Power - Output：45W
- Voltage - Rated：84 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：440193
- Supplier Device Package：440193
- Configuration：-
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Overview
The CGH40035F is a gallium nitride (GaN) high electron mobility transistor (HEMT) operating from a 28 V rail. It provides broadband performance from DC to 4 GHz with up to 15 dB small signal gain at 2.0 GHz and 13 dB at 4.0 GHz. The device delivers a typical saturated output power (PSAT) of 45 W and achieves 60% drain efficiency at PSAT. It utilizes a screw-down flange package (440193) designed for linear and compressed amplifier circuits.
Feature Summary
- High-efficiency GaN HEMT technology enabling wide bandwidth capabilities
- Broadband operation covering DC to 4 GHz frequency range
- Screw-down flange package design for thermal management
Applications
- Cellular infrastructure
- Broadband amplifiers
- Test instrumentation
- Class A, AB, Linear Amplifiers Suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
Procurement Notes
Verify the specific package type 440193 and confirm RoHS compliance status before procurement. Ensure that large-signal models compatible with ADS and MWO are obtained for accurate circuit simulation. Confirm that the application environment does not exceed the maximum case operating temperature limits specified in the datasheet.
Selection Notes
Select this component for applications requiring high power density and broad bandwidth in RF and microwave systems. Evaluate the suitability of the 28 V operating voltage against system power supply constraints. Consider the thermal resistance characteristics when designing heat sinking solutions for continuous wave operations.
Part Context
This part belongs to MACOM's portfolio of GaN-on-SiC transistors engineered for demanding RF applications. It serves as a general-purpose solution for various amplifier topologies. The device integrates advanced semiconductor materials to deliver industry-leading gain and efficiency metrics compared to traditional silicon-based alternatives.
Replacement Considerations
CGH40035F-AMP
FAQ
What is the maximum forward gate current rating?
The maximum forward gate current is rated at 10.0 mA.
Is the device stable under mismatched load conditions?
Yes, the device can withstand an output mismatch stress VSWR of up to 10:1 at all phase angles without damage.
What is the recommended soldering temperature limit?
The maximum soldering temperature is 245 °C.
