CGH40045P

Overview

The CGH40045P is a Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT) manufactured by MACOM. It operates within the DC to 4.0 GHz frequency range and delivers an output power of 45 watts. The device utilizes a Pill package configuration and requires a drain-source voltage of 28 volts for optimal performance.

Feature Summary

• Utilizes GaN-on-SiC technology for high efficiency and gain
• Designed for broadband RF applications up to 4.0 GHz
• Integrated into a robust Pill package for thermal management

Applications

• Broadband radio frequency power amplification
• Electronic warfare systems
• Military radar transmitters

Procurement Notes

Verify the specific manufacturing date code and lot traceability upon receipt, as production cycles may vary. Confirm that the received component matches the exact MACOM part number CGH40045P to ensure compatibility with existing circuit designs. Check for any physical damage to the package leads before integration into the final assembly process.

Selection Notes

Select this component when a 45-watt output power level is required across a wide bandwidth extending to 4.0 GHz. The 28-volt operating voltage aligns with standard RF power supply architectures. Consider the Pill package form factor for board layout constraints and thermal dissipation requirements in high-power density environments.

Part Context

This device belongs to MACOM's portfolio of next-generation RF power transistors based on GaN-on-SiC technology. These components are engineered to provide industry-leading gain and efficiency compared to traditional semiconductor materials. The product line targets demanding applications requiring reliable high-power performance in compact form factors.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical parameter datasheets.