CGH40090PP

Overview

The CGH40090PP is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed for broadband RF and microwave applications. Operating from a 28 V rail, it delivers up to 100 W typical saturated power output (PSAT) with 55% drain efficiency at PSAT. The device supports operation up to 2.5 GHz, providing 16 dB small signal gain at 2.0 GHz. It features a 4-lead flange package (440199) suitable for linear and compressed amplifier circuits.

Feature Summary

• High power density GaN HEMT technology
• Broadband operation capability up to 2.5 GHz
• High drain efficiency at saturated power
• Robust output mismatch stress tolerance

Applications

• Linear amplifier circuits
• Compressed amplifier designs
• General purpose RF and microwave systems

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official website prior to procurement. Confirm that the package type matches the required mechanical footprint. Ensure thermal management solutions align with the specified junction-to-case thermal resistance and maximum case operating temperature limits provided in the electrical characteristics.

Selection Notes

Select this component for applications requiring high power output within a compact form factor. Consider the 28 V supply requirement and the need for appropriate biasing networks. Evaluate thermal dissipation capabilities based on the power derating curve. Verify stability requirements at lower frequencies using series resistors if necessary.

Part Context

This part belongs to MACOM's CGH40 series of GaN HEMTs. It is distinct from the CGH40090PP-AMP, which is a demonstration amplifier assembly containing the transistor. The CGH40090PP is the discrete semiconductor device intended for integration into custom circuit designs by engineers.

Replacement Considerations

Consult the manufacturer's cross-reference tools or product pages for parametrically similar parts. No direct substitute part numbers are explicitly confirmed in the provided documentation.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) rating is 120 Volts at a case temperature of 25 °C.

Is large signal modeling available?

Yes, large signal models are available for ADS and MWO simulation environments.

How is the saturated power defined?

PSAT is defined as the point where Q1 or Q2 equals the gate current (IG) of 14 mA.