CGH40120F

Overview

The CGH40120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) from MACOM Technology Solutions. It operates from a 28 V rail and supports frequencies up to 2.5 GHz. The device provides 20 dB small signal gain at 1.0 GHz and 15 dB at 2.0 GHz. Typical saturated output power (PSAT) is 120 W with 70% drain efficiency at PSAT. Absolute maximum ratings include a 120 V drain-source voltage, -10 to +2 V gate-to-source voltage, and an operating junction temperature of 225 °C. The component utilizes the 440193 flange package.

Feature Summary

• High efficiency and wide bandwidth capabilities suitable for linear and compressed amplifier circuits
• Robust performance under mismatched load conditions with no damage at all phase angles
• Large signal models available for ADS and MWO simulation environments

Applications

• 2-Way private radio systems
• Broadband amplifiers
• Cellular infrastructure
• Test instrumentation
• Class A and AB linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to ensure correct configuration. Confirm that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Check for any recent product change notices regarding electrical characteristics or packaging updates before finalizing orders.

Selection Notes

Select this component for applications requiring high power density and broadband operation in the RF and microwave spectrum. Ensure the design accommodates the 28 V supply requirement and adequate thermal management for the flange package. Consider the availability of large signal models for accurate circuit simulation during the design phase.

Part Context

This part belongs to the CGH series of GaN HEMTs manufactured by MACOM Technology Solutions. These devices are designed for general-purpose broadband solutions in RF and microwave applications. The technology leverages advanced GaN material properties to deliver high gain and efficiency compared to traditional semiconductor technologies.

Replacement Considerations

Consult MACOM datasheets for direct replacements within the CGH series. Verify pinout compatibility and electrical specifications when considering alternative suppliers.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Is the device sensitive to output mismatch?

No, the device can withstand a VSWR of 10:1 at all phase angles without damage when operating at 100 W CW.

What package type does the CGH40120F use?

It uses the 440193 flange package.