CGH60008D-GP4

Overview

The CGH60008D-GP4 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) die manufactured by MACOM Technology Solutions. It operates up to 6 GHz with a drain-source breakdown voltage of 120 VDC and an operating junction temperature capability of 225°C. At 28 V operation, it delivers 8 W typical saturated power output (PSAT) with 65% drain efficiency at 4 GHz. Small signal gain is 15 dB at 4 GHz and 12 dB at 6 GHz. The device features high thermal conductivity and supports Class A and AB linear amplification for complex waveforms.

Feature Summary

• Utilizes GaN HEMT technology for superior breakdown voltage and thermal conductivity compared to silicon or arsenide alternatives
• Supports high-temperature operation with a maximum junction temperature rating of 225°C
• Provides high power density and wide bandwidth capabilities suitable for demanding RF applications
• Designed for high-efficiency performance in linear amplifier configurations

Applications

• 2-Way Private Radio systems
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Linear amplifiers for OFDM, W-CDMA, EDGE, and CDMA waveforms

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to ensure correct packaging and handling specifications. Confirm that the procurement channel provides authentic components directly from the manufacturer or authorized distributors. Ensure all handling procedures strictly follow electrostatic discharge (ESD) precautions and recommended eutectic die attach methods using AuSn solder to maintain device integrity and reliability during assembly.

Selection Notes

Select this component when designing circuits requiring high power density and wide bandwidth operation up to 6 GHz. Consider its 120 VDC breakdown voltage and 225°C junction temperature rating for robust performance in high-stress environments. Evaluate suitability for Class A and AB linear applications supporting complex modulation schemes like OFDM and W-CDMA. Ensure the design accommodates bare die assembly requirements including vacuum collet pick-up and gold wire bonding.

Part Context

This component belongs to the MACOM CGH series of Gallium Nitride High Electron Mobility Transistors. These devices are engineered for high-performance radio frequency applications where superior power density and thermal management are critical. The series leverages GaN material properties to outperform traditional silicon and gallium arsenide transistors in terms of breakdown voltage and electron drift velocity.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Cross-referencing with similar series members requires careful evaluation of electrical parameters and physical dimensions to ensure compatibility with existing designs.