CGH60060D-GP4

CGH60060D-GP4

$106.47
  • Description:RF MOSFET HEMT 28V DIE
  • Series:GaN

SKU:d780b22d70a4 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET HEMT 28V DIE
  • Series:GaN
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:HEMT
  • Frequency:6GHz
  • Gain:13dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:60W
  • Voltage - Rated:84 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:Die
  • Supplier Device Package:Die
  • Configuration:-

Download product information

CGH60060D-GP4

Overview

The CGH60060D-GP4 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) die manufactured by MACOM Technology Solutions. Designed for high-frequency radio frequency applications, this component operates up to 6 GHz with an output power capability of 8W. It features a nominal drain voltage rating of 28V and provides a typical small-signal gain of 15dB. The device utilizes a bare die package configuration suitable for surface mount or screw mount integration in RF power amplifier designs.

Feature Summary

  • Utilizes GaN HEMT technology for high-efficiency RF performance
  • Capable of delivering 8W output power at 6 GHz
  • Features 15dB gain under standard test conditions
  • Operates with a 28V drain voltage supply

Applications

  • RF power amplification in wireless communication systems
  • Broadband instrumentation and radar applications
  • Military and aerospace electronic warfare subsystems

Procurement Notes

Verify the specific suffix GP4 against the manufacturer's current datasheet to confirm pinout compatibility and marking codes. Ensure that the receiving facility has appropriate ESD protection protocols for bare die components. Confirm RoHS compliance status if required by local regulations. Validate that the supplier provides traceability documentation consistent with MACOM's quality standards for defense-grade semiconductors.

Selection Notes

Select this component when designing circuits requiring high linearity and efficiency in the microwave frequency range. Compare its thermal resistance characteristics against available heat sink solutions to ensure adequate dissipation for the 8W output level. Evaluate the gate bias requirements against the control circuitry capabilities. Consider the bare die form factor when determining the substrate material and mounting strategy for the final assembly.

Part Context

This part belongs to MACOM's CGH series of GaN on Silicon Carbide transistors. These devices are engineered for demanding RF environments where traditional silicon technologies may lack sufficient power density or breakdown voltage. The series supports various packaging options including die, ceramic packages, and plastic modules depending on the specific model variant within the product family.

Replacement Considerations

Consult MACOM official substitution guides for direct equivalents. Verify that any alternative device matches the 28V rating, 6 GHz frequency limit, and 8W power output specifications. Ensure the replacement maintains compatible gate threshold voltages and thermal management requirements for the existing board layout.

CGH60060D-GP4CGH60060D-GP4
$106.47
Buy Now